CN106663618A - High-strength alloy-containing polishing head of cmp apparatus - Google Patents
High-strength alloy-containing polishing head of cmp apparatus Download PDFInfo
- Publication number
- CN106663618A CN106663618A CN201580028203.4A CN201580028203A CN106663618A CN 106663618 A CN106663618 A CN 106663618A CN 201580028203 A CN201580028203 A CN 201580028203A CN 106663618 A CN106663618 A CN 106663618A
- Authority
- CN
- China
- Prior art keywords
- main body
- rubbing head
- strength alloy
- devices including
- cmp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000956 alloy Substances 0.000 title claims abstract description 42
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 39
- 238000005498 polishing Methods 0.000 title abstract description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010936 titanium Substances 0.000 claims abstract description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 17
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000011651 chromium Substances 0.000 claims abstract description 13
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 13
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 12
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000001179 sorption measurement Methods 0.000 claims description 11
- 238000005086 pumping Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000005336 cracking Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000003325 tomography Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention relates to a high-strength alloy-containing polishing head of a CMP apparatus that can fundamentally prevent cracks of a ceramic material by improving the structure of a circular perforated plate constituting the polishing head and replacing the material thereof with a high-strength special alloy so that it is possible to extend a lifetime of a product and to maximize an operating ratio of equipment, thereby significantly enhancing production efficiency. The polishing head of a CMP apparatus comprises a pressure adjusting device (11), an attraction part (12), a circular perforated plate (100), and a retainer ring (13), wherein the perforated plate (100) includes: a main body (110) having the shape of a circular plate; a pair of alignment recesses (111) (111) formed in the center of the upper portion of the main body (110) to be symmetric to each other; a plurality of holes (112) formed in the main body (110); four through-holes (113) formed on a side of the main body (100); a central recess (114) formed in the center of the rear surface of the main body (110); a ball (115), a portion of which is fixedly inserted into the center of the central recess (114); a circular metal plate (116) that is installed to be fixedly inserted into the central portion of the central recess (114) and has an exposure hole (116a) formed therein through which a portion of the ball (115) is exposed; a plurality of balancing pins (117) fixedly inserted into the periphery of the central recess (114); and upper and lower peripheral portions (120) (130) fixed to surround the periphery of the main body (110), and the metal plate (116) is formed of a special alloy that contains zirconium, titanium, nickel, and chromium.
Description
Technical field
The present invention relates to semiconductor subassembly manufacture chemically mechanical polishing (CMP, Chemical Mechanical
Polishing) the rubbing head of device, relates more specifically to a kind of rubbing head of the CMP devices including high-strength alloy, improves shape
Into the structure of the rounded porous plate of rubbing head, material is replaced with high intensity specific alloy, fundamentally prevent ceramic material
The cracking (crack) of matter, thus, extends the life-span of product, meanwhile, maximization ground improves the running rate of equipment, thus, greatly carries
High efficiency.
Background technology
Highly integrated recently as semiconductor device, distribution structure forms multiple stratification, list of the stacking on semiconductor substrate
Surface tomography between bit location increases, therefore explores for extremely important to the technology of the surface tomography planarization process.
In the technology that the semiconductor substrate surface is carried out planarization process, CMP is that semiconductor substrate surface is entered
Row is physical and chemically polish, after rubbing head absorption chip, be attached in supply the top of polishing block polishing pad and
In the state of polishing fluid (slurry), contact simultaneously rotates at a high speed.
The rubbing head of existing CMP devices is illustrated referring to figs. 1 to Fig. 3.
First, as shown in figure 1, CMP devices include：Rubbing head (10), vacuum suction fixed chip (W), and it is moved to throwing
After the polishing pad (21) of light table (20), apply pressure contact and rotate at a predetermined velocity, perform planarization operation；Polishing block
(20), there is polishing pad (21) on top, rotates at a predetermined rate, directly contact with the burnishing surface of chip (W).
Also, the rubbing head (10) includes：Pressure-regulating device (11), when CMP is performed pumping is performed
(Pumping) action；Adsorption section (12), positioned at the lower section of the pressure-regulating device (11), using the pressure-regulating device
(11) pumping and the vacuum that produces, directly adsorb chip (W)；Snap ring (13), prevents in the process polished to the chip (W)
In, the chip (W) departs from from adsorption section (12).
Also, polish shell (14) to be connected with the pressure-regulating device (11), polishing shell (14) is revolved with a high speed
Rotary shaft (15) connection for turning.
And, it is also formed with being formed with the circle of multiple through holes on surface in the bottom of the pressure-regulating device (11)
Porous plate (30), the function of the pressure transmission to adsorption section (12) that execution will be produced because of the pressure-regulating device (11).
Here, being specifically described to the structure of the porous plate (30).
The porous plate (30) as shown in Figures 2 and 3, including：The main body (31) of disc-shape；Edge part (32), surrounds
The edge of the fixation main body (31)；Alignment pin (33), protrusion is formed at the center upper portion of the main body (31)；Multiple holes
(34), it is formed at the main body (31)；Porous groove (35), is formed at the side of the main body (31), is formed with four holes；In
Centre concave part (36), forms central authorities behind the main body (31)；Ball (37), one part insertion is fixed on the drop-center
The central authorities in portion (36)；Balancing plug (38), is multiple, is inserted and fixed to around the central fovea groove portion (36).
For circular porous plate (30) configured as described above, protrusion is formed at the center upper portion of the main body (31)
Alignment pin (33) plays centrally-located, and execution prevents the touch or rolling because of the ball (37) installed in following central fovea groove portion (36)
The effect of the cracking moved (Vibration) and produce, there occurs on the contrary in reduction chip technology according to the alignment pin (33)
The problem of flat even degree.
In addition, because mutually rocking with the ball (37), thus, being with the middle body of central fovea groove portion (36) and central authorities
There is non-directional cracking in center, when technique is carried out, the leakage (Leak) that should not occur occurs, and ceramic powder is to semiconductor core
The reason for piece (W) surface impacts and becomes serious reduction earning rate (Yield).
Because of the reason, there is the problem that equipment stops, running rate is low in abnormalities, and opposite low yield is caused seriously
Affect.
Also, overall for rubbing head installed in multiple balancing plugs (38) of the edge part of the central fovea groove portion (36)
Balance and arrange, execution prevents six balancing plugs (38) amesiality in process, or the function that gradient is distorted.
But, existing balancing plug (38) as shown in Fig. 3 (b), by particular adhesive by the fixation of balancing plug (38) lower end
Portion (38a) is attached to fixed on central fovea groove portion (36), as time go on, described adhesive solidification, and and occur what powder disorderly flew
Phenomenon, to the glossing serious ill effect is caused.
The content of the invention
Problems to be solved by the invention
The present invention is researched and developed to solve problem described above, and the purpose of the present invention is a kind of including high-strength alloy to provide
CMP devices rubbing head, improvement forms the structure of the rounded porous plate of rubbing head, by material with high intensity specific alloy generation
Replace, fundamentally prevent the cracking (crack) of ceramic material, thus, extend the life-span of product, while the ground that maximizes is improved
The running rate of equipment, thus production efficiency is greatly improved.
The technical scheme of solve problem
In order to realize object indicated above, the rubbing head of the CMP devices of the present invention, including：Pressure-regulating device, is performing
During CMP, pumping action is performed；Adsorption section, positioned at the lower section of the pressure-regulating device, using the pressure-regulating device
Pumping and the vacuum that produces, directly adsorb chip；Circular porous plate, positioned at the bottom of the pressure-regulating device, in table
Face is formed with multiple through holes, by the pressure transmission produced because of the pressure-regulating device to the adsorption section；Snap ring, prevents
The chip departs from from adsorption section during polishing to the chip, and the rubbing head of the CMP devices is characterised by, described
Porous plate includes：The main body of disc-shape；Detent, is a pair, and both sides are symmetrically formed in the center upper portion of the main body；
Hole, is multiple, is formed at the main body；Porous groove, is formed at the side of the main body, is formed with four holes；Drop-center
Portion, is formed at central authorities behind the main body；Ball a, part is inserted and fixed to the central authorities of the central fovea groove portion；Circular gold
Category plate, insertion is fixedly installed on the central part of the central fovea groove portion, exposed hole is formed with, so as to expose of the ball
Point；Balancing plug, is multiple, is inserted and fixed to around the central fovea groove portion；Top and lower edge edge, around fixed described
The edge of main body, wherein, the metallic plate is made up of the specific alloy comprising zirconium, titanium, nickel and chromium.
Also, it is a feature of the present invention that the main body, upper edge edge and lower edge edge by comprising zirconium, titanium, nickel and
The specific alloy material of chromium is constituted.
Also, it is a feature of the present invention that the specific alloy include 40 to 60 weight % zirconiums, 30 to 70 weight % titaniums, 5
To 15 weight % nickel and chromium.
Also, it is a feature of the present invention that the metallic plate, main body, top and lower edge edge are by comprising stainless steel
(SUS) metal material is constituted.
Also, it is a feature of the present invention that the fixed part of the plurality of balancing plug is formed as spiral-shaped, combined with screw
Mode is fixed on central fovea groove portion.
Also, it is a feature of the present invention that the air supply line of the porous transmission by being formed at the main body is by one
The same metal material of formula is constituted.
Also, it is a feature of the present invention that the metallic plate is made up of titanium.
In addition, it is a feature of the present invention that the metallic plate, main body, top and lower edge edge are all made up of titanium.
The beneficial effect of the invention
As described above, the invention has the advantages that, removal is formed at the alignment pin on the top of existing rounded porous plate,
A pair of detents needed for centrally-located are symmetrically generated by both sides, thus, greatly improves flat even degree.
Also, the invention has the advantages that, the central fovea groove portion of porous plate bottom is fixed on in metallic plate attachment, prevent
The slight crack produced because of currently used ceramic material, significantly improves bad technique, also, the stopping of equipment is minimized
Change, to increase productivity.
Also, the invention has the advantages that, replace ceramics using specific alloy and metal class, by by the four of porous plate
Individual porous and the air supply line that transmits are changed to the metal material of integral type by existing screw combination, thus, by because
The cracking of appropriate section and cause equipment stop and resulting being minimized of expense.
In addition, the invention has the advantages that, balancing plug is combined by screw and is fixed on central fovea groove portion, thus, is prevented
The disorderly winged phenomenon of powder is only produced because current adhesive solidifies.
Description of the drawings
Fig. 1 is the schematic arrangement figure of common CMP devices；
Fig. 2 is the construction profile of existing rounded porous plate；
Fig. 3 (a) (b) is above existing rounded porous plate and following sectional view；
Fig. 4 is the construction profile of the rounded porous plate of the present invention；
Fig. 5 (a) (b) is above rounded porous plate of the present invention and following sectional view；
Fig. 6 is the view sub-anatomy of rounded porous plate of the present invention.
Specific embodiment
First, to the additional reference marks of inscape of each accompanying drawing, for identical structural element, even if different
On accompanying drawing, identical symbol has also been used as far as possible.Also, in the explanation present invention, judge the known function or knot of correlation
When illustrating necessary to the main idea of non-invention or obscuring the present invention of structure, omits it and illustrates.
Below, referring to the drawings, a preferred embodiment of the present invention is further illustrated.
Fig. 4 is the construction profile of the rounded porous plate of the present invention, and Fig. 5 (a) (b) is above rounded porous plate of the present invention
And following sectional view, Fig. 6 is the view sub-anatomy of rounded porous plate of the present invention.
As illustrated, the rubbing head of the CMP devices of the present invention, including：Pressure-regulating device (11), is performing CMP
When, perform pumping action；Adsorption section (12), positioned at the lower section of the pressure-regulating device (11), using by pressure tune
The pumping of regulating device (11) and the vacuum that produces and directly adsorb chip (W)；Circular porous plate (100), positioned at the pressure
The bottom of adjusting means (11), surface is formed with multiple through holes, by the pressure produced because of the pressure-regulating device (11)
Power is transmitted to the adsorption section (12)；Snap ring (13), during the chip (W) is polished, prevents the chip (W) from suction
Attached portion (12) departs from, wherein, the porous plate (100) includes：The main body (110) of disc-shape；Detent (111) (111),
For a pair, both sides are symmetrically formed in the center upper portion of the main body (110)；Multiple holes (112), are formed at the main body (110)；
Porous groove (113), is formed at the side of the main body (110), is formed with four holes；Central fovea groove portion (114), is formed at institute
State central authorities behind main body (110)；Ball (115) a, part is inserted and fixed to the central authorities of the central fovea groove portion (114)；It is circular
Metallic plate (116), insertion is fixedly installed on the central part of the central fovea groove portion (114) so that the one of the ball (115)
Partial denudation；Balancing plug (117), is multiple, and insertion is fixed on around the central fovea groove portion (114)；Top and lower edge
Edge (120) (130), around the edge of the fixation main body (110).
The main body (110) of the disc-shape is formed by ceramic material, around the upper of the edge of the fixation main body (110)
Portion and lower edge edge (120) (130) are made up of metal material.
Preferably, the upper edge edge (120) and lower edge edge (130) are made up of stainless steel (SUS) material.
Also, it is the knot for positioning rubbing head to be formed at central a pair of detents (111) of the main body (110)
Structure, according to the structure of the detent (111), it is therefore prevented that because mutually rocking with ball (115), and make with main body (110) bottom
Central fovea groove portion (114) and central authorities centered on, there is non-directional cracking, and the leakage occurred in glossing
(leak)。
Also, the metallic plate (116) makes ball (115) be fixed on central authorities, while also forming a part of exposed exposed hole
(116a), and by particular adhesive it is adhesively fixed in the lower central concave part (114) of main body (110).
According to the present invention, the metallic plate (116) is made up of specific alloy.
The specific alloy is made up of the metal alloy comprising zirconium, titanium, nickel and chromium.
Wherein, the zirconium (zirconium, Zr) of the specific alloy is for improving corrosion resistance, and raising alloy
Surface strength and use, the titanium (titanium, Ti) is for by alloy lighting, and to improve intensity and use.
In addition, the nickel (nickel, Ni) is used for the easiness of manufacture and the processing of alloy and uses, the chromium
(chrome, Cr) is used for the easiness of manufacture and the processing of alloy and uses.
The specific alloy presses various proportion of composing, zirconium, titanium, nickel and chromium can be included, especially, in order to preferably play resistance to
Corrosivity, high intensity and lighting characteristic, it is also possible to by following proportion of composing, comprising the composition.
That is, 40 to 60 weight % zirconiums, 30 to 70 weight % titaniums, 5 to 15 weight % nickel and chromium are included in the specific alloy.
Comprising less than described in 40 weight % during zirconium, the corrosion resistance and surface strength of alloy is low, during more than 60 weight %,
There is a problem of being difficult to lighting because the density of alloy is uprised.
Comprising less than described in 30 weight % during titanium, it is difficult to form the lighting of alloy, during more than 70 weight %, there is alloy
Low intensity under problem.
Also, during comprising less than nickel described in 5 weight % and chromium, cause to be difficult to manufacture alloy, the processing of manufactured alloy
The low problem of property, during more than 15 weight %, relatively, the content step-down of zirconium and titanium, and there is the intensity step-down of alloy and increase
Add weight, the low problem of corrosion resistance.
As described above, the metallic plate (116) of the present invention is made up of the specific alloy material.
By the structure of metallic plate as above (116), intensity can be greatly improved, thus, be prevented because using ceramics
Material and the cracking that occurs, so as to significantly improve the bad problem of technique.
Also, it is the plurality of, i.e., six balancing plugs (117) in glossing, preventing rubbing head amesiality or
Gradient is distorted, and shown in such as Fig. 5 (b), by screw the fixed part (117a) of lower end is processed, and is fixed on central fovea groove portion (114)
When so that fix by screw combination.
Therefore, six balancing plugs (117) fixed as described above prevent because according to existing adhesive bonding mode
And the problem that the there occurs phenomenon that i.e. powder disorderly flies because adhesive solidifies.
Also, the air supply line transmitted by being formed at the porous groove (113) of the main body (110) is by existing
Screw combination is changed to integral type identical material, thus, the equipment that causes the cracking because of appropriate section is stopped and
Resulting being minimized of expense.
Also, according to the present invention, the main body (110) of disc-shape, upper edge edge with the metallic plate (116) equally
And lower edge edge (130) are also made up of above-mentioned specific alloy material (120).
Also, the metallic plate (116), main body (110), top and lower edge edge (120) (130) are by comprising stainless steel
(SUS) metal material is constituted.
Also, according to the present invention, metallic plate (116) also only can be made up of titanium.
Also, the metallic plate (116), main body (110), top and lower edge edge (120) (130) also can all by
Titanium is constituted.
Claims (8)
1. a kind of rubbing head of the CMP devices including high-strength alloy, the rubbing head of the CMP devices, including：Pressure-regulating device
(11), pumping action is performed when CMP is performed；Adsorption section (12), positioned at the lower section of the pressure-regulating device (11), profit
The vacuum produced with the pumping by the pressure-regulating device (11) directly adsorbs chip (W)；Circular porous plate
(100), positioned at the bottom of the pressure-regulating device (11), multiple through holes are formed with surface, will be adjusted by the pressure
Regulating device (11) and the pressure transmission that produces are to the adsorption section (12)；Snap ring (13), prevents from throwing the chip (W)
The chip (W) departs from from adsorption section (12) in the process of light, should include the feature of the rubbing head of the CMP devices of high-strength alloy
It is,
The porous plate (100) includes：
The main body (110) of disc-shape；
A pair of detents (111) (111), are asymmetrically formed in the center upper portion of the main body (110) in both sides；
Multiple holes (112), are formed at the main body (110)；
Porous groove (113), is formed at the side of the main body (110), is formed with four holes；
Central fovea groove portion (114), is formed at central authorities behind the main body (110)；
Ball (115) a, part is inserted and fixed to the central authorities of the central fovea groove portion (114)；
Circular metallic plate (116), is inserted and fixed to the central part of the central fovea groove portion (114), is formed with exposed hole
(116a), so that the ball (115) it is a part of exposed；
Balancing plug (117), is multiple, is inserted and fixed to around the central fovea groove portion (114)；
Top and lower edge edge (120) (130), around the edge of the fixation main body (110),
Wherein, the metallic plate (116) is made up of the specific alloy comprising zirconium, titanium, nickel and chromium.
2. the rubbing head of the CMP devices including high-strength alloy according to claim 1, it is characterised in that
The main body (110), upper edge edge (120) and lower edge edge (130) are by the special conjunction comprising zirconium, titanium, nickel and chromium
Golden material is constituted.
3. the rubbing head of the CMP devices including high-strength alloy according to claim 1 and 2, it is characterised in that
The specific alloy includes 40 to 60 weight % zirconiums, 30 to 70 weight % titaniums, 5 to 15 weight % nickel and chromium.
4. the rubbing head of the CMP devices including high-strength alloy according to claim 1, it is characterised in that
The metallic plate (116), main body (110), top and lower edge edge (120) (130) are by the gold comprising stainless steel (SUS)
Category material is constituted.
5. the rubbing head of the CMP devices including high-strength alloy according to claim 1, it is characterised in that
The fixed part (117a) of the plurality of balancing plug (117) is formed as spiral-shaped, and with screw combination central authorities are fixed on
Concave part (114).
6. the rubbing head of the CMP devices including high-strength alloy according to claim 1, it is characterised in that
The air supply line transmitted by being formed at the porous groove (113) of the main body (110) by integral type identical
Metal material is formed.
7. the rubbing head of the CMP devices including high-strength alloy according to claim 1, it is characterised in that
The metallic plate (116) is formed by titanium.
8. the rubbing head of the CMP devices including high-strength alloy according to claim 1, it is characterised in that
The metallic plate (116), main body (110), top and lower edge edge (120) (130) are all made up of titanium.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140066002A KR20140092273A (en) | 2014-05-30 | 2014-05-30 | Polishing head of cmp apparatus comprising high strength alloy |
| KR10-2014-0066002 | 2014-05-30 | ||
| PCT/KR2015/004157 WO2015182882A1 (en) | 2014-05-30 | 2015-04-27 | High-strength alloy-containing polishing head of cmp apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106663618A true CN106663618A (en) | 2017-05-10 |
Family
ID=51739049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580028203.4A Pending CN106663618A (en) | 2014-05-30 | 2015-04-27 | High-strength alloy-containing polishing head of cmp apparatus |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20140092273A (en) |
| CN (1) | CN106663618A (en) |
| TW (1) | TWI598184B (en) |
| WO (1) | WO2015182882A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210047999A (en) * | 2019-10-22 | 2021-05-03 | 삼성디스플레이 주식회사 | Polishing head unit, substrate procesing apparatus including the same and processing method of substrate using the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6231428B1 (en) * | 1999-03-03 | 2001-05-15 | Mitsubishi Materials Corporation | Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring |
| US20040226656A1 (en) * | 2003-04-28 | 2004-11-18 | Strasbaugh | Wafer carrier pivot mechanism |
| CN101224551A (en) * | 2008-01-30 | 2008-07-23 | 沈阳理工大学 | Solid state rare earths metal high speed polishing method of diamond film |
| KR20130129870A (en) * | 2013-09-23 | 2013-11-29 | 원종수 | Polishing head of cmp apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004119495A (en) * | 2002-09-24 | 2004-04-15 | Sony Corp | Polishing head, chemical mechanical polishing equipment, and method for manufacturing semiconductor device |
| KR101392401B1 (en) * | 2012-11-30 | 2014-05-07 | 이화다이아몬드공업 주식회사 | Wafer retaininer ring with a function of pad conditioner and method for producing the same |
-
2014
- 2014-05-30 KR KR1020140066002A patent/KR20140092273A/en not_active Application Discontinuation
-
2015
- 2015-04-27 CN CN201580028203.4A patent/CN106663618A/en active Pending
- 2015-04-27 WO PCT/KR2015/004157 patent/WO2015182882A1/en active Application Filing
- 2015-05-14 TW TW104115452A patent/TWI598184B/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6231428B1 (en) * | 1999-03-03 | 2001-05-15 | Mitsubishi Materials Corporation | Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring |
| US20040226656A1 (en) * | 2003-04-28 | 2004-11-18 | Strasbaugh | Wafer carrier pivot mechanism |
| CN101224551A (en) * | 2008-01-30 | 2008-07-23 | 沈阳理工大学 | Solid state rare earths metal high speed polishing method of diamond film |
| KR20130129870A (en) * | 2013-09-23 | 2013-11-29 | 원종수 | Polishing head of cmp apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140092273A (en) | 2014-07-23 |
| TW201620671A (en) | 2016-06-16 |
| TWI598184B (en) | 2017-09-11 |
| WO2015182882A1 (en) | 2015-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5516051B2 (en) | Polishing apparatus using polishing pad and glass plate manufacturing method | |
| US7727053B2 (en) | Double-side polishing method for wafer | |
| JP2006332585A5 (en) | ||
| CN103522168A (en) | Cylindrical part outer circle machining device based on holder eccentric rotary swing type double-plane grinding | |
| JP2014233830A (en) | Abrasive pad dresser and production method thereof, abrasive pad dressing device, and polishing system | |
| JP2015174168A (en) | Manufacturing method of carrier for double-sided polishing device, carrier for double-sided polishing device, and double-sided polishing method | |
| CN103537981A (en) | Superfinishing method for outer circle of high-precision cylindrical part | |
| CN106663618A (en) | High-strength alloy-containing polishing head of cmp apparatus | |
| KR20190093574A (en) | Carrier for double side polishing device, double side polishing device and double side polishing method | |
| CN105563301B (en) | Cmp method, the method to set up of its polishing time processing procedure and wafer | |
| JP2012157936A (en) | Polishing pad and method of fabricating semiconductor device | |
| CN207326710U (en) | Grinding head and chemical mechanical polishing device | |
| WO2015063969A1 (en) | Carrier plate and workpiece double-side polishing device | |
| CN205765681U (en) | A kind of skive | |
| CN206484422U (en) | A kind of flat panel products polissoir suction base combined tools | |
| JP2006175597A (en) | Polishing method | |
| CN208592709U (en) | Grinding module and substrate grinding device including it | |
| CN208451255U (en) | A kind of countersunk head formula marble polishing disk | |
| CN207758298U (en) | A kind of abrasive wheel | |
| KR100899637B1 (en) | Wafer doubleside polishing device | |
| JP2008187117A (en) | Chemical mechanical polishing pad | |
| KR100941198B1 (en) | Pad for chamical machanical polishing | |
| CN202162705U (en) | Disc dressing device of tabletop type grinding and polishing machine | |
| CN205552310U (en) | A carborundum wheel for bearing inner race processing | |
| CN206937073U (en) | A kind of erratic star wheel of chemically mechanical polishing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170510 |