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JPS6011950A - Memory system of double structure - Google Patents

Memory system of double structure

Info

Publication number
JPS6011950A
JPS6011950A JP58119265A JP11926583A JPS6011950A JP S6011950 A JPS6011950 A JP S6011950A JP 58119265 A JP58119265 A JP 58119265A JP 11926583 A JP11926583 A JP 11926583A JP S6011950 A JPS6011950 A JP S6011950A
Authority
JP
Japan
Prior art keywords
memory
data
error
address
register
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58119265A
Other languages
Japanese (ja)
Inventor
Yukihiko Kitano
北野 之彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58119265A priority Critical patent/JPS6011950A/en
Publication of JPS6011950A publication Critical patent/JPS6011950A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/16Error detection or correction of the data by redundancy in hardware
    • G06F11/1666Error detection or correction of the data by redundancy in hardware where the redundant component is memory or memory area
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/16Error detection or correction of the data by redundancy in hardware
    • G06F11/1658Data re-synchronization of a redundant component, or initial sync of replacement, additional or spare unit
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/16Error detection or correction of the data by redundancy in hardware
    • G06F11/20Error detection or correction of the data by redundancy in hardware using active fault-masking, e.g. by switching out faulty elements or by switching in spare elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

PURPOSE:To improve the reliability of a memory system by confirming that the data output of a memory is normal, then writing the normal data automatically to another memory. CONSTITUTION:When the data of a using memory 1 is judged to be wrong by an error detecting part 4, the memory 1 is switched to a spare memory 2. The data output given from the memory 2 is sent to the part 4 and confirmed that it is normal. Then a processing control part 7 gives an indication to a memory switching part 3 to turn the memory 1 into a data writable state with an indication of a microprogram stored in a semifixed memory 8. Then an indication is given to a data switching part 9 to obtain a state where the input data can be supplied to a data writing register 13. Then the normal data is shifted to the register 13 from a data reading register 12 and then written to the address of the memory 1.

Description

【発明の詳細な説明】 (a) 発明の技術分野 本発明は電子計算機の小容量メモリの二重化システムに
於ける誤り処理後のメモリ復帰システムに関する。
DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a memory recovery system after error processing in a small capacity memory duplication system for an electronic computer.

(b) 技術の背景 近年電子計算機のローカルストレージの如き小容量メモ
リは、該メモリを封I用メモリと予備メモリに二重化す
ることQてより、一方のメモリの特定アドレスから読み
出したデータに誤りが検出された場合マシンチェック処
理にてfl、l>方のメモリに切り替え該メモリの上述
と同じ特定アドレスからデータを読み出し誤りのないデ
ータであることを確認して使用するという二重化メモリ
システムが用いられメモリシステムの信頼性を上げてい
る。
(b) Background of the technology In recent years, small-capacity memories such as the local storage of computers have been duplicated into a storage memory and a spare memory, which prevents errors from occurring in data read from a specific address in one memory. If detected, a redundant memory system is used in which the machine check process switches to the fl, l> memory and reads data from the same specific address as mentioned above in the memory and confirms that the data is error-free before use. Improves memory system reliability.

然し乍ら、従来の二重化システムでは誤りデータを出力
した一方のメモリのアト°レスは他方のメモリノ該アド
レスに9ノリ替えられた俊は放置されていたため該アド
レスのデータに門して言えば他方のメモリしか使用でき
ず二重化が失なわれていた。本発明はこの問題に着目し
、誤りデータを出力したアドレスに再度正常データを書
き込むことによりメモリシステムのイ3頼度低下を防ぐ
ものである。
However, in the conventional duplex system, the address of one memory that outputs the erroneous data was changed by 9 times to the address of the other memory and was left unattended, so from the point of view of the data at that address, the address of the other memory However, duplication was lost. The present invention focuses on this problem and prevents the reliability of the memory system from decreasing by writing normal data again to the address where the error data was output.

(C)従来技術と問題点 第1図に従来技術による二重化メモリシステムの系統図
を示す。
(C) Prior Art and Problems FIG. 1 shows a system diagram of a dual memory system according to the prior art.

第1図に於て、lは現用メモリ、2は予備メモにアドレ
ス(xl)のデータ読み出しの指令があった場合アドレ
スレジスタ11に100よりXlが入力されアドレスレ
ジスタ11により指定された現用メモリのデータ(アド
レス(X+))を読み出し該データはデータ読出し用レ
ジスタ12にセットされる。
In FIG. 1, l is the current memory, and 2 is the backup memory. When there is a command to read data at address (xl), Xl is input from 100 to the address register 11, and the current memory specified by the address register 11 is Data (address (X+)) is read and the data is set in the data read register 12.

データ読出し用レジスタ12にセットされたデータは誤
り検出部4に送られ誤りの判定が行われる。
The data set in the data read register 12 is sent to the error detection section 4, where an error determination is made.

誤り検出部4の判定が誤りあシの場合、該判定信号は処
理制御部5に送られ処理制御部5はメモリ切替部3に指
定して読出し可能なメモリを現用メモリ1から予備メモ
リ2に切り替えさせ予備メモリのアドレス(Xl)(X
=X2 )よりデータをデータ読出し用レジスタ12に
セットさせる。該レジスタ12にセットされたデータは
上述と同じプロセスでデータの誤りの有無がチェックさ
れる。
If the error detection unit 4 makes an error determination, the determination signal is sent to the processing control unit 5, and the processing control unit 5 specifies the memory switching unit 3 to change the readable memory from the current memory 1 to the spare memory 2. Address of spare memory (Xl) (X
=X2), the data is set in the data read register 12. The data set in the register 12 is checked for errors in the data using the same process as described above.

予備メモリ2に切り替った後は予備メモリ2のデータ出
力に誤りが無い限り予備メモリ2は読出し可能な状態を
続けているが、予備メモリ2のデータ出力に誤りが検出
されると現用メモリ1に上述ト同様なプロセスでメモリ
の切替えが行われる。
After switching to the spare memory 2, the spare memory 2 continues to be readable as long as there is no error in the data output of the spare memory 2, but if an error is detected in the data output of the spare memory 2, the current memory 1 Memory switching is then performed using a process similar to that described above.

上述の処理制御50機能は半固定記憶装置6に格納され
ているマイクロプログラムの指示に従い誤り検出部4の
判定信号を受けて処理手順を定め各部を制御する。レジ
スタ13はメモリl及び2に初期の段階でデータを嶺き
込むときに用いるレジスタであり、300は該入力の入
力端を示す。
The above-mentioned processing control 50 function receives the judgment signal from the error detection section 4 according to instructions from a microprogram stored in the semi-permanent storage device 6, determines a processing procedure, and controls each section. Register 13 is a register used when inputting data into memories 1 and 2 at an initial stage, and 300 indicates the input end of the input.

200は本システムの読出しデータの出力端を示す。200 indicates the read data output end of this system.

上述の従来技術による二重化メモリシステムであるとメ
モリのデータに誤りがあった場合、メモリの切替えは行
うが誤りデータを出力したアドレス(上述の現用メモリ
のアドレス(X+))は使用不可であり予備メモリ2の
アドレス(xz)Lか使用できず二重化されていないこ
とになりメモリシステムの信頼度が低下するという問題
点がある。
In the dual memory system based on the conventional technology described above, if there is an error in memory data, the memory will be switched, but the address where the error data was output (the above-mentioned current memory address (X+)) will be unusable and will be used as a backup. There is a problem that address (xz)L of memory 2 cannot be used and is not duplicated, reducing the reliability of the memory system.

(d) 発明の目的 本発明は上述の問題点に鑑み一方のメモリのデータ出力
に誤りがあり他方のメモリに切り替えられた後正常なデ
ータを再度一方のメモリに書き込み二重化メモリシステ
ムの信頼度低下を防ぐことを目的とする。
(d) Purpose of the Invention In view of the above-mentioned problems, the present invention provides a system in which there is an error in the data output of one memory, and after switching to the other memory, normal data is written again to one memory, reducing the reliability of the duplex memory system. The purpose is to prevent

(e) 発明の構成 本発明は二重化メモリシステムに於て、一方のメモリの
データ出力に誤シが検出され他方のメモリに切り替えら
れた後、他方のメモリのデータ出力が正常であることを
確認し該正常のデータを一方のメモリに自動的に省き込
むシステムであって上述の目的を十分達成するものであ
る。
(e) Structure of the Invention In a duplex memory system, the present invention detects an error in the data output of one memory and switches to the other memory, and then confirms that the data output of the other memory is normal. This system automatically saves the normal data to one memory, and satisfactorily achieves the above-mentioned purpose.

(f) 発明の実施例 本発明による二重化メモリシステムの実施例全系統図に
て第2図に示す。第2図の符号で第1図と同一の符号の
ものは第1図と同じ機能を有する。
(f) Embodiment of the Invention FIG. 2 shows an entire system diagram of an embodiment of the duplex memory system according to the present invention. Reference numerals in FIG. 2 that are the same as those in FIG. 1 have the same functions as in FIG.

7は処理制御部にてその内材は第1図の処理制御部6と
ほぼ同様であるが本発明によるデータ切替部9を制御す
る機能が付加されている点が異なる。8け半固定記憶装
置にてこれも内材は第1図の半固定記憶装置6とほぼ四
棒であるが、不発、明によるメモリ復帰のプロセスがマ
イクロプログラムに付加された点が異なる。
Reference numeral 7 denotes a processing control section whose internal components are almost the same as the processing control section 6 shown in FIG. 1, except that a function for controlling the data switching section 9 according to the present invention is added. This 8-digit semi-permanent storage device also has an internal structure of approximately four rods compared to the semi-permanent storage device 6 of FIG. 1, but differs in that a memory recovery process is added to the microprogram due to an accident.

第2図に於て、データ読出し指示によりItみ出された
現用メモリ1のアドレス(Xl)のデータが誤り検出部
4により誤りと判断されると該誤り信号は誤り検出部4
より処理ai1!御部7に送られ半固定記憶装置8のプ
ログラムに従い該プログラムを処理してメモリ切替部3
に指示して」、11川メモリ1から予備メモリ2に明り
替えアドレスレジスタ11により予備メモリ2のアドレ
ス(Xl)のデータをデータ読出し用レジスタ12に七
ノドさせ誤り検出部4に該レジスタ12の訟B1シデー
タの詞りをチェックさせる。
In FIG. 2, when the data at the address (Xl) of the current memory 1 retrieved by the data read instruction is determined to be an error by the error detection unit 4, the error signal is transmitted to the error detection unit 4.
More processing AI1! The memory switching unit 3 processes the program according to the program sent to the control unit 7 and stored in the semi-permanent storage device 8.
11, the data at the address (Xl) of the spare memory 2 is transferred to the data reading register 12 by the address register 11, and the error detection unit 4 is instructed to change the address (Xl) from the memory 1 to the spare memory 2. Have students check the lyrics of the B1 data.

以上は従来技術と同様であるが、これから後の処理は本
発明の内容である。
Although the above is similar to the prior art, the subsequent processing is the content of the present invention.

切り替えられた予備メモリからのデータ出力は上述の如
く誤り検出部4に送られチェックされ正常であることが
確認された後半固定記憶装置8に格納されているマイク
ロプログラムの指示によシ処理制御部7はメモリ切替部
3に指示して現用メモリ1をデータ書込み可能の状態に
切り替えさせデータ切替部9に指示して入力データがデ
ータ書込み用レジスタ13に入力できる状態に切り替え
させデータ読出し用レジスタ12よりデータ書込用レジ
スタ13に正常なデータを移しアドレスレジスタ11に
アドレス(xl)を指定させデータ書込用レジスタ13
よシ現用メモリ1のアドレス(X+)に正常データを書
き込ませる。
The data output from the switched spare memory is sent to the error detection unit 4 as described above, and is checked and confirmed to be normal.The data output is sent to the error detection unit 4 and is then checked by the processing control unit according to instructions from the microprogram stored in the second half fixed storage device 8. 7 instructs the memory switching unit 3 to switch the current memory 1 to a state in which data can be written, and instructs the data switching unit 9 to switch to a state in which input data can be input to the data writing register 13; the data reading register 12; The normal data is transferred to the data write register 13 and the address (xl) is specified to the address register 11.
Write normal data to address (X+) of current memory 1.

以上により現用メモリ1のアドレス(Xl)は正常なデ
ータを格納で自メモリの二重化が保たれる。
As described above, the address (Xl) of the current memory 1 stores normal data and the duplication of the own memory is maintained.

(g) 発明の効果 本発明により、現用メモリと予備メモリよシ成る二重化
メモリシステムに於て、一方のメモリの読出しデータに
誤りがあシ他方のメモリに切シ替られても一方のメモリ
に直ちに自動的に正常なデータが書き込まれるためメモ
リの二重化が常に保たれてメモリの信頼性が確保され電
子計算機の信頼性向上に大きな効果がある1、
(g) Effects of the Invention According to the present invention, in a dual memory system consisting of a current memory and a spare memory, even if there is an error in the read data of one memory and the data is switched to the other memory, the data in one memory is Since normal data is immediately and automatically written, memory redundancy is always maintained and memory reliability is ensured, which has a great effect on improving the reliability of electronic computers1.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来技術による二4白ヒメモリンステムの系統
図を示し、第2図は本発明による二重化メモリシステム
の実施例を系統図にて示したものである。 全図を通じ同一符号は同一対象物を示し、1は現用メモ
リ、2は予備メモリ、3はメモリ切替部。 4け誤り検出部、5は従来技術による処理制御部。 6は従来技術による半固定記憶4AN、7は本発明によ
る処理制御部、8け本発明による半固定記憶装置修、9
は本発明によるデータ切潜部である1゜キ − 口 竿 2 図
FIG. 1 shows a system diagram of a 24-white himemory stem according to the prior art, and FIG. 2 shows a system diagram of an embodiment of a duplex memory system according to the present invention. The same reference numerals indicate the same objects throughout the figures; 1 is the current memory, 2 is the spare memory, and 3 is the memory switching unit. 4 is a digit error detection section, and 5 is a processing control section based on the prior art. 6 is a semi-permanent storage 4AN according to the prior art; 7 is a processing control unit according to the present invention; 8 is a semi-permanent storage device repair according to the present invention; 9
Figure 2 is a data cutting section according to the present invention.

Claims (1)

【特許請求の範囲】[Claims] 現用メモリと予備メモリを有し読出しデータの誤シ検出
を行いメモリ切替えを行う電子計算機メモリの二重化シ
ステムに於て、現用メモリと予備メモリのいずれか一方
のメモリの特定アドレスからの読出しデータに誤りがあ
った場合、他方のメモリに切り替えて該メモリの該特定
アドレスからデータを読み出し該データに誤りが無いこ
とを確認した後、誤りデータを出力した該一方のメモリ
の特定アドレスに、誤りが無いことを確認された該他方
のメモリの特定アドレスからのデータを自動的に書き込
むことを特徴とする二重化メモリシステム。
In a redundant computer memory system that has a working memory and a spare memory and performs memory switching by detecting errors in read data, an error occurs in the read data from a specific address in either the working memory or the spare memory. If there is an error, switch to the other memory, read the data from the specific address of the memory, confirm that there is no error in the data, and then check that there is no error in the specific address of the one memory that outputs the error data. A dual memory system characterized in that data from a specific address of the other memory is automatically written.
JP58119265A 1983-06-30 1983-06-30 Memory system of double structure Pending JPS6011950A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58119265A JPS6011950A (en) 1983-06-30 1983-06-30 Memory system of double structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58119265A JPS6011950A (en) 1983-06-30 1983-06-30 Memory system of double structure

Publications (1)

Publication Number Publication Date
JPS6011950A true JPS6011950A (en) 1985-01-22

Family

ID=14757059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58119265A Pending JPS6011950A (en) 1983-06-30 1983-06-30 Memory system of double structure

Country Status (1)

Country Link
JP (1) JPS6011950A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6445467A (en) * 1987-08-12 1989-02-17 Shinetsu Chemical Co Silicone tacky agent
JPH03236066A (en) * 1990-02-14 1991-10-22 Tokyo Electric Co Ltd Electrophotographic device
JPH04332996A (en) * 1991-05-08 1992-11-19 Koufu Nippon Denki Kk Troubleshooting system
JPH04332997A (en) * 1991-05-08 1992-11-19 Koufu Nippon Denki Kk Troubleshooting system
US5216069A (en) * 1987-08-12 1993-06-01 Shin-Etsu Chemical Co., Ltd. Silicone self-adhesives comprising modified organopolysiloxanes and self-adhesive tapes
JP2000098826A (en) * 1998-09-28 2000-04-07 Fuji Xerox Co Ltd Image forming device
EP1652899A1 (en) 2004-10-28 2006-05-03 Shin-Etsu Chemical Co., Ltd. Silicone composition and a pressure sensitive adhesive film having a pressure sensitive adhesive layer made from the composition
KR20220076461A (en) 2019-10-08 2022-06-08 신에쓰 가가꾸 고교 가부시끼가이샤 Primer composition for silicone adhesive

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6445467A (en) * 1987-08-12 1989-02-17 Shinetsu Chemical Co Silicone tacky agent
JPH0534391B2 (en) * 1987-08-12 1993-05-21 Shinetsu Chem Ind Co
US5216069A (en) * 1987-08-12 1993-06-01 Shin-Etsu Chemical Co., Ltd. Silicone self-adhesives comprising modified organopolysiloxanes and self-adhesive tapes
JPH03236066A (en) * 1990-02-14 1991-10-22 Tokyo Electric Co Ltd Electrophotographic device
JPH04332996A (en) * 1991-05-08 1992-11-19 Koufu Nippon Denki Kk Troubleshooting system
JPH04332997A (en) * 1991-05-08 1992-11-19 Koufu Nippon Denki Kk Troubleshooting system
JP2000098826A (en) * 1998-09-28 2000-04-07 Fuji Xerox Co Ltd Image forming device
EP1652899A1 (en) 2004-10-28 2006-05-03 Shin-Etsu Chemical Co., Ltd. Silicone composition and a pressure sensitive adhesive film having a pressure sensitive adhesive layer made from the composition
KR20220076461A (en) 2019-10-08 2022-06-08 신에쓰 가가꾸 고교 가부시끼가이샤 Primer composition for silicone adhesive

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