KR102287424B1 - Light-emitting device - Google Patents

Abstract

The light emitting device of the present invention includes a strip-shaped region with high flexibility and a strip-shaped region with low flexibility, which are alternately arranged in one direction. Areas with high flexibility include flexible light emitting panels. The low flexible region includes a light emitting panel and a support panel having lower flexibility than the light emitting panel and overlapping the light emitting panel. The light emitting panel includes an external connection electrode, and it is preferable that the length in the direction of the low flexible region A overlapping the external connection electrode is longer than the length in the direction of the low flexible region B closest to the region A.

Description

Light-Emitting Device {LIGHT-EMITTING DEVICE}

The present invention relates to a light emitting device, a display device, an electronic device, a lighting device, or a manufacturing method thereof. In particular, the present invention relates to a light emitting device, a display device, an electronic device, or a lighting device using electroluminescence (EL), or a manufacturing method thereof.

In recent years, light-emitting devices and display devices are expected to be applied to and diversified in various uses.

For example, a light emitting device and a display device for a portable device or the like are required to be thin, light and hard to break.

Light emitting devices using EL (also referred to as EL devices) have features such as ease of thinness and weight reduction, high-speed response to input signals, and driving by a DC low voltage source, so the application of the light emitting devices to light emitting devices and display devices is difficult. is being proposed

For example, Patent Document 1 discloses a flexible active matrix light emitting device in which a transistor functioning as a switching element and an organic EL element are provided on a film substrate.

Japanese Patent Laid-Open No. 2003-174153

For example, a display device having a smaller display area by reducing its size to increase portability has less information that can be displayed on one screen and lowers readability.

An object of one embodiment of the present invention is to provide a light emitting device, a display device, an electronic device, or a lighting device with high portability. Another object of one embodiment of the present invention is to provide a light emitting device, a display device, or an electronic device with high visibility. Another object of one embodiment of the present invention is to provide a light emitting device, a display device, or an electronic device with high portability and browsing properties.

An object of one embodiment of the present invention is to provide a novel light emitting device, a display device, an electronic device, or a lighting device. Another object of one embodiment of the present invention is to provide a lightweight light emitting device, a display device, an electronic device, or a lighting device. Another object of one embodiment of the present invention is to provide a highly reliable light emitting device, display device, electronic device, or lighting device. Another object of one embodiment of the present invention is to provide a light emitting device, a display device, an electronic device, or a lighting device that is not easily damaged. Another object of one embodiment of the present invention is to provide a thin light emitting device, a display device, an electronic device, or a lighting device. Another object of one embodiment of the present invention is to provide a flexible light emitting device, a display device, an electronic device, or a lighting device. Another object of one embodiment of the present invention is to provide a light emitting device or lighting device that is seamless and has a wide light emitting area, or a display device or electronic device that is seamless and has a wide display area. Another object of one embodiment of the present invention is to provide a light emitting device, a display device, an electronic device, or a lighting device with low power consumption.

In one aspect of the present invention, it is not necessary to achieve all of the above objects.

A light emitting device of one embodiment of the present invention includes a strip-shaped high flexible region and a strip-shaped low flexible region that are alternately arranged. This light emitting device can be folded by bending the highly flexible region. The light emitting device of one embodiment of the present invention has high portability in a folded state, and is seamless in an open state, since it has a wide light emitting area, and therefore has high reading properties. According to one embodiment of the present invention, the portability of the device can be increased without reducing the size of the light emitting region or the display region.

Specifically, one embodiment of the present invention is a light emitting device including a flexible light emitting panel and a plurality of supporting panels supporting the light emitting panel and spaced apart from each other. This support panel has lower flexibility than the light emitting panel.

One embodiment of the present invention is a light emitting device including a strip-shaped high flexible region and a strip-shaped low flexible region that are alternately arranged in a first direction. Areas with high flexibility include flexible light emitting panels. The low flexible region includes a light emitting panel and a support panel having lower flexibility than the light emitting panel and overlapping the light emitting panel.

Preferably, the light emitting device further includes a protective layer having higher flexibility than the support panel, and the area with high flexibility and low flexibility includes a light emitting panel and a protective layer overlapping the light emitting panel.

Another embodiment of the present invention is a light emitting device comprising a strip-shaped high flexible region and a strip-shaped low flexible region that are alternately arranged in the first direction. Areas with high flexibility include flexible light emitting panels. The low flexible region includes a support panel having less flexibility than the light emitting panel, and a light emitting panel supported by the support panel.

The light emitting device further includes a pair of protective layers, and it is preferable that the protective layers have higher flexibility than the support panel. In a region with low flexibility, it is also preferable that a pair of protective layers are supported by a support panel, and a light emitting panel is positioned between the pair of protective layers.

Another embodiment of the present invention is a light emitting device comprising a strip-shaped high flexible region and a strip-shaped low flexible region that are alternately arranged in the first direction. Areas with high flexibility include flexible light emitting panels. The low flexibility region includes a pair of support panels and a light emitting panel between the pair of support panels. The support panel has lower flexibility than the light emitting panel.

The light emitting device further includes a pair of protective layers, and it is preferable that the protective layers have higher flexibility than the support panel. Even in a region with low flexibility, it is preferable that a pair of protective layers is positioned between a pair of support panels, and a light emitting panel is positioned between a pair of protective layers.

In any of the above light emitting devices, when one of two adjacent highly flexible regions is bent inward and the other is bent outward, a circle having the radius of curvature of the light emitting panel in one region of high flexibility as the radius , and circles having a radius of curvature of the light emitting panel in the other region having high flexibility are preferably superimposed on each other by moving in a direction parallel to the support plane of the light emitting device.

In addition, in this specification, "bent inward" means that the light emitting surface of the light emitting panel is bent to face inward, and "bent outward" refers to bending so that the light emitting surface of the light emitting panel faces outward. The light emitting surface of a light emitting panel or a light emitting device refers to a surface from which light emitted from a light emitting element is extracted.

In any of the above light emitting devices, when the plurality of highly flexible regions are alternately bent inward and outward, between the surface of the light emitting panel closest to the supporting plane of the light emitting device and the surface of the light emitting panel farthest from the supporting plane of the light emitting device The shortest distance L of , satisfies L<2(D+T). Here, D represents the sum of the radii of curvature of the light emitting panel in a plurality of regions with high flexibility, and T represents the thickness of the light emitting panel.

In any of the above light emitting devices, the light emitting panel includes an external connection electrode, and the length in the first direction of the low flexible region A overlapping the external connection electrode is the second of the low flexible region B closest to the region A. It is preferable that it is longer than the length in one direction.

In the light emitting device, among regions A, B, and region C with low flexibility farthest from region A, region A has the longest length in the first direction and region C has the second longest length in the first direction .

In the light emitting device, it is preferable that the length of the region A in the first direction is longest among the plurality of regions having low flexibility.

An embodiment of the present invention also includes an electronic device including the light emitting device and a lighting device including the light emitting device. In addition, the light emitting device itself may function as an electronic device or a lighting device.

In addition, the light emitting device in this specification includes the display device using a light emitting element in its category. In addition, in the category of the light emitting device in the present specification, a module provided with a connector such as an anisotropic conductive film or TCP (Tape Carrier Package) to the light emitting element; a module provided with a printed wiring board at the end of the TCP; and a module in which an IC (integrated circuit) is directly mounted on a light emitting device by a COG (Chip On Glass) method. In addition, light emitting devices used for lighting fixtures and the like are also included in the category.

In one embodiment of the present invention, it is possible to provide a light emitting device, a display device, an electronic device, or a lighting device with high portability. In one embodiment of the present invention, it is possible to provide a light emitting device, a display device, or an electronic device with high visibility. In one embodiment of the present invention, it is possible to provide a light emitting device, a display device, or an electronic device with high portability and browsing properties.

In one embodiment of the present invention, a novel light emitting device, a display device, an electronic device, or a lighting device can be provided. In one aspect of the present invention, it is possible to provide a lightweight light emitting device, a display device, an electronic device, or a lighting device. In one embodiment of the present invention, a highly reliable light emitting device, display device, electronic device, or lighting device can be provided. In one aspect of the present invention, it is possible to provide a light emitting device, a display device, an electronic device, or a lighting device that is not easily damaged. In one aspect of the present invention, a thin light emitting device, a display device, an electronic device, or a lighting device can be provided. In one embodiment of the present invention, a flexible light emitting device, a display device, an electronic device, or a lighting device can be provided. In one aspect of the present invention, it is possible to provide a light emitting device or lighting device that is seamless and has a wide light emitting area, or a display device or electronic device that is seamless and has a wide display area. In one embodiment of the present invention, a light emitting device, a display device, an electronic device, or a lighting device with low power consumption can be provided.

1A to 1C show a light emitting device.
2 shows a light emitting device.
3A to 3F show a light emitting device.
4A to 4D show a light emitting device.
5A to 5D show a light emitting device.
6A and 6B show a light emitting device.
7 (A) and (B) show a light emitting panel.
8 (A) and (B) show a light emitting panel, respectively.
9 (A) and (B) show a light emitting panel, respectively.
10 (A) and (B) show a light emitting panel, respectively.
11A to 11C show a method of manufacturing a light emitting panel.
12A to 12C show a method of manufacturing a light emitting panel.
13 shows a light emitting panel.
14A to 14C show a light emitting device.
Fig. 15 shows a light emitting device.
16A to 16F show a light emitting device.
17A and 17B show a light emitting device.
18A and 18B show a light emitting panel.
19A to 19D show a light emitting device.
20A to 20C show a light emitting device.
21A to 21C show a light emitting device.
22 shows a light emitting device.

EMBODIMENT OF THE INVENTION Embodiment is demonstrated in detail with reference to drawings. The present invention is not limited to the following description, and it is readily understood by those skilled in the art that various changes and modifications can be made without departing from the spirit and scope of the present invention. Accordingly, the present invention should not be construed as being limited to the description of the following embodiments.

In addition, in the structure of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and the description of these parts is not repeated. In addition, the same hatching pattern is applied to a part having a similar function, and this part is not specifically indicated by a symbol in some cases.

In addition, the position, size, range, etc. of each structure shown in the drawings and the like may not be accurately represented for easy understanding. Therefore, the disclosed invention is not necessarily limited to the position, size, scope, etc. disclosed in the drawings and the like.

(Embodiment 1)

In this embodiment, the light emitting device of the embodiment of the present invention will be described.

A light emitting device of one embodiment of the present invention includes a strip-shaped high flexible region and a strip-shaped low flexible region that are alternately arranged. The light emitting device can be folded by bending the highly flexible region. The light emitting device of one embodiment of the present invention has high portability in a folded state, and is seamless in an open state, since it has a wide light emitting area, and therefore has high reading properties.

In the light emitting device of one embodiment of the present invention, the highly flexible region can be bent inward or outward.

When the light emitting device of one embodiment of the present invention is not used, the light emitting surface of the light emitting panel can be folded to face inward, thereby preventing the light emitting surface from being dirty or damaged.

When the light emitting device of one embodiment of the present invention is used, it can be opened so that the entire light emitting area can be used without a seam, or it can be folded so that the light emitting surface of the light emitting panel faces outward and the light emitting area can be partially used. Power consumption of the light emitting device can be reduced by folding the light emitting device and making a part of the light emitting area hidden from the user as a non light emitting area.

Hereinafter, a light-emitting device that can be folded into three pieces including two strip-shaped regions with high flexibility and three strip-shaped regions with low flexibility will be described as an example.

1A shows an open light emitting device. Fig. 1B shows the light emitting device being opened or folded. FIG. 1C shows a folded light emitting device. 2 is a perspective view illustrating components of a light emitting device. Fig. 3A is a plan view of the light emitting surface side of the light emitting device, and Fig. 3B is a plan view on the opposite side to the light emitting surface side of the light emitting device. 3(C), (D), and (F) are examples of side views of the light emitting device of FIG. 3A as viewed in the direction indicated by the arrow. FIG. 3E is a cross-sectional view taken along the dash-dotted line A-B of FIG. 3A . 4 (A), (C), and (D) are examples of side views of the light emitting device of FIG. 1 (C) viewed in the direction indicated by the arrow.

(A), (B), and (C) of Fig. 14 show modifications of Fig. 1 (A), (B), and (C), respectively. 14A shows an open light emitting device. Fig. 14B shows the light emitting device being opened or folded. 14C shows a folded light emitting device. 15 is a perspective view illustrating components of a light emitting device. Fig. 16A is a plan view of the light-emitting surface side of the light-emitting device, and Fig. 16B is a plan view of the light-emitting device opposite to the light-emitting surface side. 16C and 16D are examples of side views of the light emitting device of FIG. 16A as viewed in the direction indicated by the arrow. Fig. 16E is a cross-sectional view taken along the dash-dotted line A-B of Fig. 16A. Fig. 16(F) shows a modification of the light emitting device shown in Fig. 16(C) and the like.

The light emitting device of FIGS. 1A to 1C and the light emitting device shown in FIGS. 14A to 14C are a flexible light emitting panel 11, a plurality of support panels 15a, and a plurality of support panels ( 15b). Each support panel 15a and support panel 15b has lower flexibility than the light emitting panel 11 . The plurality of support panels 15a are spaced apart from each other. The plurality of support panels 15b are spaced apart from each other.

As shown in FIG. 3A , the light emitting device includes regions E1 with high flexibility and regions E2 with low flexibility, which are alternately arranged. The region with high flexibility and the region with low flexibility are strip-shaped (striped) regions. In this embodiment, a plurality of regions with high flexibility and a plurality of regions with low flexibility are parallel to each other, but these regions need not be arranged parallel to each other.

The region E1 having high flexibility in the light emitting device includes at least a flexible light emitting panel. A light emitting panel using an organic EL element is particularly preferable because it not only has high flexibility and impact resistance, but also can be made thin or light in weight. Structural examples of the light emitting panel are described in detail in Embodiments 2 and 3.

The region E2 having low flexibility in the light emitting device includes at least a flexible light emitting panel and a support panel having lower flexibility than the light emitting panel and overlapping the light emitting panel.

As shown in Fig. 16A, the light emitting device includes regions with high flexibility and regions with low flexibility, which are alternately arranged in one direction.

In FIG. 16A , W1 to W3 indicate the lengths of the regions with low flexibility in the direction in which the regions with high flexibility and regions with low flexibility are arranged.

In addition, it is preferable that the region with low flexibility includes external connection electrodes of the light emitting panel. Here, the external connection electrode corresponds to the conductive layer 157 of FIG. 7B, for example.

In Fig. 16A, a region having a low flexibility having a length W1 includes an external connection electrode. In the light emitting device, the length W1 of the low flexible region A overlapping the external connection electrode is longer than the length W3 of the low flexible region B closer to the region A. As shown in FIG.

Here, when the end (also referred to as a folded portion) of the light emitting panel 11 is located outside the ends of the supporting panel 15a and the supporting panel 15b in the light emitting device in the folded state, the light emitting panel 11 is There is a case where it is damaged or an element included in the light emitting panel 11 is damaged.

In the light emitting device in the folded state shown in FIG. 1C , the ends of the light emitting panel 11 are aligned with the ends of the support panel 15a and the support panel 15b above and below the light emitting panel 11 . With this structure, damage to the light emitting panel 11 and damage to elements included in the light emitting panel 11 can be prevented.

Further, in the light emitting device in the folded state shown in Fig. 14C, the end of the light emitting panel 11 is located inside the end of the support panel 15a and the support panel 15b. With this structure, damage to the light emitting panel 11 and damage to elements included in the light emitting panel 11 can be further prevented.

Therefore, in the light emitting device, it is preferable that the length W1 of the region A with low flexibility overlapping the external connection electrode is longer than the length W3 of the region B with low flexibility closer to the region A. do. Among the length W1 of the region A, the length W3 of the region B, and the length W2 of the region C with low flexibility further away from the region A, the length W1 is the longest It is particularly preferred that the length W2 is the second longest.

The support panel is provided on at least one of the light emitting surface side and the side opposite to the light emitting surface side of the light emitting panel.

Like the support panel 15a and the support panel 15b shown in Fig. 3(C) or Fig. 16(C), it is preferable that the light-emitting panel has a support panel on both the light-emitting surface side and the side opposite to the light-emitting surface side, , in this case, the light emitting panel can be sandwiched between a pair of supporting panels, increasing the mechanical strength of the low flexible area and making the light emitting device less likely to break.

Alternatively, the support panel 15 shown in FIG. 3D or 16D may be used instead of the support panel 15a and the support panel 15b, and the light emitting panel 11 is the support panel 15 ) may be supported by

1 (A), 2, and 3 (C), for example, the protective layer and the side surface of the light emitting panel are exposed to the low flexible region (E2), one embodiment of the present invention is not limited As shown in Fig. 3(F), the side surface of the protective layer and the light emitting panel is the support panel 15 (or a pair of support panels 15a and 15b) in the low flexible region E2. one or both) may be covered. 21A to 21C show a specific structure of a light emitting device in which a protective layer and a side surface of the light emitting panel are covered with a support panel 15b. 21(A) shows the open light emitting device. Fig. 21B shows the light emitting device being opened or folded. 21C shows the folded light emitting device. 22 is a perspective view illustrating components of the light emitting device.

Since the light emitting device can be made thinner or lighter, it is preferable that the light emitting panel has a support panel only on one of the light emitting surface side and the side opposite to the light emitting surface side. For example, as shown in Fig. 16F, a light emitting device including a plurality of support panels 15b and not including a plurality of support panels 15a may be employed.

It is preferable that the area|region E1 with high flexibility and the area|region E2 with low flexibility include a light emitting panel and a protective layer which overlaps with the light emitting panel and has higher flexibility than a support panel. In this case, the highly flexible region E1 in the light emitting device can have high mechanical strength as well as flexibility, and the light emitting device is less likely to be damaged. With this structure, it is possible to obtain a light emitting device that is not easily damaged by deformation due to external force or the like in a region having high flexibility as well as a region having low flexibility.

For example, among the light emitting panel, the supporting panel, and the protective layer, it is preferable that the supporting panel is the thickest and the light emitting panel is the thinnest. Or, for example, among the light emitting panel, the supporting panel, and the protective layer, it is preferable that the supporting panel has the lowest flexibility and the light emitting panel has the highest flexibility. This structure increases the difference in flexibility between the area of low flexibility and the area of high flexibility. Therefore, since the light emitting device can be reliably folded in the area with high flexibility, bending of the area with low flexibility is prevented. As a result, the reliability of the light emitting device can be improved. This structure also prevents the light emitting device from being bent at an unwanted portion.

It is preferable that the light emitting panel has a protective layer on both the light emitting surface side and on the side opposite to the light emitting surface side, so that the light emitting panel can be sandwiched between a pair of protective layers, so that the light emitting device is increased in mechanical strength and less prone to breakage it gets difficult

For example, as shown in FIG. 3(C) or FIG. 16(C) , in an area E2 having low flexibility, a pair of support panels 15a and 15b It is preferable that the protective layers 13a and 13b are positioned and a light emitting panel (not shown) is positioned between the pair of protective layers 13a and 13b.

Alternatively, as shown in Fig. 3(D) or Fig. 16(D), in the region E2 having low flexibility, a pair of protective layers (13a) and (13b) by the support panel 15 ) is supported and a light emitting panel (not shown) is preferably positioned between the pair of protective layers (13a) and (13b).

Since the light emitting device can be made thinner or lighter, it is preferable that the light emitting panel has a protective layer only on one of the light emitting surface side and the side opposite to the light emitting surface side. For example, a light emitting device including the protective layer 13b and not including the protective layer 13a may be employed.

When the protective layer 13a on the light-emitting surface side of the light-emitting panel is a light-shielding film, it is possible to prevent external light from being irradiated to the non-emission area of the light-emitting panel. This structure is preferable in order to prevent photodegeneration of transistors and the like of the driving circuit included in the non-light emitting region.

2, 3 (E), 15, or 16 (E), the opening of the protective layer 13a provided on the light emitting surface side of the light emitting panel 11 is the light emitting area of the light emitting panel. It overlaps with (11a). The protective layer 13a overlaps with the non-light-emitting region 11b surrounding the light-emitting region 11a like a frame. The protective layer 13b provided on the side opposite to the light emitting surface side of the light emitting panel 11 overlaps the light emitting area 11a and the non light emitting area 11b. The protective layer 13b is provided in a wide area, preferably the entire surface, opposite to the light emitting surface side, thereby strongly protecting the light emitting panel, thereby improving the reliability of the light emitting device.

In the light emitting device of one embodiment of the present invention, when a plurality of highly flexible regions are alternately bent inward and outward, the surface of the light emitting panel closest to the support surface of the light emitting device and the light emitting panel furthest from the support plane It is preferred that the shortest distance L between the surfaces satisfies L<2(D+T). Here, D represents the sum of the radii of curvature of the light emitting panel in a plurality of regions with high flexibility, and T represents the thickness of the light emitting panel. In this case, the light emitting device can be made thinner.

The light emitting device shown in FIG. 4A is in a state in which a certain highly flexible area bends inward and a certain high flexible area bends outward. The light emitting panel is positioned at the boundary between the protective layer 13a and the protective layer 13b in FIG. 4A . The diameter D1 and the diameter D2 in FIG. 4A are described in detail with reference to FIG. 4B. D1 denotes the diameter of a circle whose radius is the radius of curvature of the light emitting panel in the highly flexible region bent inward. D2 represents the diameter of a circle whose radius is the radius of curvature of the light emitting panel in the highly flexible region bent outward. T represents the thickness of the light emitting panel 11 . Since the sum of the diameters D1 and D2 is equivalent to twice the sum of radii of curvature of the light emitting panel in the plurality of highly flexible regions (D), L<2(D+T) is equal to L<2 It corresponds to D1+D2+2T. Here, the shortest distance L1 between the surface of the light emitting panel closest to the support plane of the light emitting device in FIG. 4A and the surface of the light emitting panel furthest from the support plane is represented by D1+D2+3T .

By reducing the thickness of the support panel 15a and the support panel 15b or the thickness of the protective layer 13a and the protective layer 13b, or a region with high flexibility to bend inward and high flexibility to bend outward By narrowing the width of the region with low flexibility between regions, for example, between the surface of the light emitting panel closest to the support plane of the light emitting device in FIG. 4C and the surface of the light emitting panel furthest from the support plane The shortest distance L2 may satisfy L2<D1+D2+3T, and also L2<D1+D2+2T, that is, L2<2(D+T).

Here, in the light emitting device, a pair of low flexible regions located on the outer side among the regions with low flexibility overlapped by folding the light emitting device are parallel to the supporting plane of the light emitting device, and a low flexible region located on the inside It is preferably not parallel to this support plane.

In the light emitting device of one embodiment of the present invention, when one of two adjacent highly flexible regions is bent inward and the other is bent outward, the radius of curvature of the light emitting panel in one region of high flexibility is the radius It is preferable that a circle having a radius of curvature of the light emitting panel in the other region having high flexibility moves in a direction parallel to the support plane of the light emitting device to overlap each other. In this case, the light emitting device can be made thinner.

As shown in FIG. 4D , a circle having a diameter D1 and a circle having a diameter D2 overlap each other by moving in a direction parallel to the support plane of the light emitting device (here, a horizontal direction in the drawing). do. The radius of curvature of the light emitting panel in the region of high flexibility bent inward and the radius of curvature of the light emitting panel in the region of high flexibility bent outward correspond to the radii of the two circles. Therefore, it can be said that the light emitting device of FIG. 4D is thin.

The shortest distance L3 between the surface of the light emitting panel closest to the support plane of the light emitting device in FIG. 4D and the surface of the light emitting panel furthest from the support plane is L3<D1+D2+3T, and also L3 <D1+D2+2T, that is, L3<2(D+T) can also be satisfied. In addition, in FIG.4(D), the protective layer 13a and the protective layer 13b are collectively shown as the protective layer 13. As shown in FIG.

The protective layer and the support panel may be formed using plastic, metal, alloy, rubber, or the like. Plastic, rubber, or the like is preferably used because it is lightweight and can form a protective layer or support panel that is hard to break. For example, silicone rubber may be used for the protective layer and stainless steel or aluminum may be used for the support panel.

The protective layer and the supporting panel are preferably formed using a material having high toughness. In this case, it is possible to provide a light emitting device with high impact resistance that is hard to break. For example, when an organic resin, a thin metal material, or a thin alloy material is used for the protective layer and the supporting panel, the light emitting device may become lightweight and difficult to break. For the same reason, it is preferable that the substrate of the light emitting panel is also formed using a material having high toughness.

The protective layer and the supporting panel on the light-emitting surface side need not have light-transmitting properties if they do not overlap the light-emitting area of the light-emitting panel. When the protective layer on the light-emitting surface side and the supporting panel overlap at least a part of the light-emitting region, it is preferably formed using a material that transmits light emitted from the light-emitting panel. There is no limitation on the light-transmitting properties of the protective layer and the supporting panel on the opposite side to the light-emitting surface side.

When any two of the protective layer, the supporting panel, and the light emitting panel are bonded to each other, any of various adhesives can be used, for example, a curable resin that can be cured at room temperature (for example, a two-component mixed resin), light A curable resin, a thermosetting resin, etc. can be used. Alternatively, a sheet-shaped adhesive may be used. Alternatively, the components of the light emitting device may be fixed using, for example, screws passing through at least two of the protective layer, the supporting panel, and the light emitting panel, or pins or clips for fixing them.

The light emitting device of one embodiment of the present invention can be used by dividing one light emitting panel (one light emitting area) into two or more areas in the folded portion(s). For example, by folding the light emitting device, a hidden area can be made a non-light-emitting state and only an exposed area can be made a light-emitting state. Accordingly, power consumption by an area not used by a user can be reduced.

The light emitting device of one embodiment of the present invention may include a sensor for determining whether each of the regions having high flexibility is bent. This sensor may consist of, for example, a switch, a MEMS pressure sensor, a pressure sensor, or the like.

In the above-described example, the light emitting device includes two highly flexible regions. However, one embodiment of the present invention is not limited thereto. For example, as shown in FIG. 5A , the light emitting device includes at least one highly flexible region E1. An embodiment of the present invention is a light emitting device that includes three highly flexible regions E1 and can be folded into four pieces as shown in FIG. 5B or 17A, and As shown in (C) or (B) of FIG. 17 , a light emitting device that includes four highly flexible regions E1 and can be folded in five operations is also included.

For example, in the light emitting device shown in FIG. 17A , among the lengths W1 to W4, W1 is the longest, W2 is the second longest, and W3 and W4 are the shortest. The length W3 and the length W4 may be different.

Further, in the light emitting device shown in Fig. 17B, among the lengths W1 to W5, W1 is the longest, W2 is the second longest, and W3, W4, and W5 are the shortest. The length W3, the length W4, and the length W5 may be different.

6A and 6B each show an example in which the light emitting device of FIG. 5C is folded into five pieces.

In FIG. 6A , the shortest distance L4 between the surface of the light emitting panel closest to the support plane of the light emitting device and the surface of the light emitting panel furthest from the support plane is represented by 2D+5T. Here, D represents the sum of the radii of curvature of the light emitting panel in a plurality of regions with high flexibility, and T represents the thickness of the light emitting panel. Also, 2D=D1+D2+D3+D4.

By reducing the thickness of the support panel 15a and the support panel 15b or the thickness of the protective layer 13a and the protective layer 13b, or a region with high flexibility to bend inward and high flexibility to bend outward By narrowing the width of the region with low flexibility between regions, for example, in FIG. The short distance L5 may satisfy L5<D1+D2+D3+D4+5T, and also L5<D1+D2+D3+D4+2T, that is, L5<2D+2T. Here, D represents the sum of the radii of curvature of the light emitting panel in a plurality of regions with high flexibility, and T represents the thickness of the light emitting panel.

In Fig. 6B, a circle having a diameter D1 and a circle having a diameter D2 overlap each other by moving in a direction parallel to the support plane of the light emitting device (here, a horizontal direction in the drawing). Further, a circle having a diameter D3 and a circle having a diameter D4 overlap each other by moving in a direction parallel to the support plane of the light emitting device. When one of the two adjacent highly flexible regions bends inward and the other bends outward, the radius of the circle with diameter D1 and the radius of the circle with diameter D2 are the outward bending flexible Since it corresponds to the radius of curvature of the light emitting panel in the high-strength region and the radius of curvature of the light emitting panel in the region with high inward flexibility, it can be said that the light emitting device in Fig. 6B is thin. This can also be said from the radius of the circle with diameter D3 and the radius of the circle with diameter D4.

In addition, as shown in Fig. 6B, the light emitting device can be made thinner by reducing the width of the other region having low flexibility compared to the outermost pair of regions with low flexibility of the light emitting device. there is.

In addition, when the light emitting device is folded, the regions with high flexibility do not necessarily need to be alternately bent inward and outward, for example, as shown in FIG. It may be bent. For example, when carrying the light emitting device in such a state, it is possible to prevent the light emitting surface of the light emitting device from being dirty or damaged.

In the light emitting device of this embodiment, one light emitting panel can be folded more than once. In this case, the radius of curvature may be, for example, 1 mm or more and 150 mm or less.

This embodiment can be suitably combined with any of the other embodiments.

(Embodiment 2)

7 (A) and (B), 8 (A) and (B), 9 (A) and (B), and 10 (A) and (B) of the light emitting panel in this embodiment ), FIGS. 11A to 11C , and FIGS. 12A to 12C . When the light emitting panel described in this embodiment is bent, the minimum radius of curvature of the bent portion of the light emitting panel may be 1 mm or more and 150 mm or less, 1 mm or more and 100 mm or less, 1 mm or more and 50 mm or less, 1 mm or more and 10 mm or less, or 2 mm or more and 5 mm or less. . The light emitting panel in this embodiment does not damage the element even when bent with a small radius of curvature (eg, 2 mm or more and 5 mm or less), and has high reliability. By bending the light emitting panel with a small radius of curvature, the light emitting device of one embodiment of the present invention can be made thin. There is no limitation in the direction in which the light emitting panel of this embodiment is bent. Further, the bent portion may be one or more than one.

<Specific example 1>

Fig. 7A is a plan view of the light emitting panel 11 described in Embodiment 1, and Fig. 7B is an example of a cross-sectional view taken along the dash-dotted line A1-A2 in Fig. 7A.

The light emitting panel shown in FIG. 7B includes an element layer 101 , an adhesive layer 105 , and a substrate 103 . The device layer 101 includes a substrate 201 , an adhesive layer 203 , an insulating layer 205 , a plurality of transistors, a conductive layer 157 , an insulating layer 207 , an insulating layer 209 , a plurality of light emitting devices, and an insulating layer. It includes a layer 211 , a sealing layer 213 , an insulating layer 261 , a coloring layer 259 , a light blocking layer 257 , and an insulating layer 255 .

Conductive layer 157 is electrically connected to FPC 108 via connector 215 .

The light emitting element 230 includes a lower electrode 231 , an EL layer 233 , and an upper electrode 235 . The lower electrode 231 is electrically connected to a source electrode or a drain electrode of the transistor 240 . An end of the lower electrode 231 is covered with an insulating layer 211 . The light emitting device 230 has a top emission structure. The upper electrode 235 has light-transmitting properties and transmits light emitted from the EL layer 233 .

The coloring layer 259 is provided to overlap the light emitting element 230 , and the light blocking layer 257 is provided to overlap the insulating layer 211 . The coloring layer 259 and the light blocking layer 257 are covered with an insulating layer 261 . A space between the light emitting device 230 and the insulating layer 261 is filled with a sealing layer 213 .

The light emitting panel includes a plurality of transistors including a transistor 240 in the light extraction unit 104 and the driving circuit unit 106 . Transistor 240 is provided over insulating layer 205 . The insulating layer 205 and the substrate 201 are adhered to each other by an adhesive layer 203 . The insulating layer 255 and the substrate 103 are adhered to each other by the adhesive layer 105 . If a film having low water permeability is used for the insulating layer 205 and the insulating layer 255 , it is possible to prevent impurities such as water from entering the light emitting device 230 or the transistor 240 , thereby improving the reliability of the light emitting panel. It is preferable because The adhesive layer 203 may be formed using the same material as the adhesive layer 105 .

The light emitting panel of Specific Example 1 can be manufactured by the following method: an insulating layer 205 , a transistor 240 , and a light emitting element 230 are formed on a forming substrate having high heat resistance; peeling off the forming substrate; The insulating layer 205 , the transistor 240 , and the light emitting device 230 are transferred to the substrate 201 and adhered by an adhesive layer 203 . The light emitting panel in Specific Example 1 can be manufactured in the following way: an insulating layer 255, a coloring layer 259, and a light blocking layer 257 are formed on a forming substrate having high heat resistance; peeling off the forming substrate; The insulating layer 255 , the coloring layer 259 , and the light blocking layer 257 are transferred to the substrate 103 and adhered by the adhesive layer 105 .

When a material with low heat resistance (eg, a resin) is used for the substrate, it is difficult to expose the substrate to a high temperature in the manufacturing process. Therefore, conditions for forming the transistor and the insulating film on the substrate are limited. Further, when a material with high water permeability (for example, resin) is used for the substrate of the light emitting device, it is preferable to form a film with low water permeability at high temperature between the substrate and the light emitting element. In the manufacturing method of this embodiment, since a transistor or the like can be formed on a forming substrate having high heat resistance, a highly reliable transistor and a sufficiently low water permeability insulating film can be formed at a high temperature. Then, by transferring the transistor and the insulating film to a substrate with low heat resistance, a highly reliable light emitting panel can be manufactured. Therefore, using one embodiment of the present invention, it is possible to provide a light emitting device with high reliability and a lightweight and/or thin shape. Details of the manufacturing method will be described later.

Each of the substrate 103 and the substrate 201 is preferably formed using a material having high toughness. In this case, it is possible to provide a light emitting panel that has high impact resistance and is not easily damaged. For example, when the substrate 103 is an organic resin substrate and the substrate 201 is a substrate formed using a thin metal material or a thin alloy material, it is a light emitting panel that is lightweight and difficult to break compared to the case where a glass substrate is used. can do.

Metal materials and alloy materials with high thermal conductivity are preferable because they can easily conduct heat to the entire substrate and prevent a local temperature rise of the light emitting panel. 10 micrometers or more and 200 micrometers or less are preferable and, as for the thickness of the board|substrate using a metallic material or alloy material, it is more preferable in it being 20 micrometers or more and 50 micrometers or less.

In addition, when a material having a high thermal emissivity is used for the substrate 201 , an increase in the surface temperature of the light emitting panel can be prevented, leading to prevention of damage to the light emitting panel or deterioration of reliability. For example, the substrate 201 may have a laminate structure of a metal substrate and a layer having a high thermal emissivity (eg, a layer that may be formed using a metal oxide or a ceramic material).

<Specific example 2>

8A shows another example of the light extraction unit 104 in the light emitting panel. The light emitting panel shown in Fig. 8A can be operated by touch. In the following specific examples, descriptions of the same configuration as in specific example 1 are omitted.

The light emitting panel shown in FIG. 8A includes an element layer 101 , an adhesive layer 105 , and a substrate 103 . The device layer 101 includes a substrate 201 , an adhesive layer 203 , an insulating layer 205 , a plurality of transistors, an insulating layer 207 , an insulating layer 209 , a plurality of light emitting devices, an insulating layer 211 , and an insulating layer. Layer 217 , sealing layer 213 , insulating layer 261 , colored layer 259 , light blocking layer 257 , a plurality of light receiving elements, conductive layer 281 , conductive layer 283 , and insulating layer 291 . ), an insulating layer 293 , an insulating layer 295 , and an insulating layer 255 .

Specific Example 2 includes the insulating layer 217 on the insulating layer 211 . The space between the substrate 103 and the substrate 201 may be adjusted by the insulating layer 217 .

FIG. 8A shows an example in which a light-receiving element is provided between the insulating layer 255 and the sealing layer 213 . Since the light-receiving element can be disposed to overlap with a non-light-emitting region of the light-emitting panel (eg, a region where no light-emitting element is provided, such as a region where a transistor or wiring is provided), the light-emitting panel has an aperture ratio of a pixel (light-emitting element) A touch sensor can be provided without degradation of

For example, as a light receiving element included in the light emitting panel, a PN photodiode or a PIN photodiode may be used. In this embodiment, as the light-receiving element, a PIN photodiode including a p-type semiconductor layer 271 , an i-type semiconductor layer 273 , and an n-type semiconductor layer 275 is used.

In addition, in the i-type semiconductor layer 273 , the concentration of each of the impurity imparting p-type conductivity and the impurity imparting n-type conductivity is 1×10 ²⁰ cm ⁻³ or less, and the photoconductivity is 100 times higher than that of the dark conductivity. It is a high semiconductor. The i-type semiconductor layer 273 includes a semiconductor containing an impurity element belonging to Group 13 or Group 15 of the periodic table. In other words, since the i-type semiconductor has weak n-type electrical conductivity when an impurity element for valence electron control is not intentionally added, the i-type semiconductor layer 273 is formed with an impurity element imparting p-type conductivity into a film. It includes semiconductors intentionally or unintentionally added during or after film formation.

The light blocking layer 257 is closer to the substrate 201 than the light receiving element and overlaps the light receiving element. The light-blocking layer 257 between the light-receiving element and the sealing layer 213 may prevent the light emitted from the light-emitting element 230 from being irradiated to the light-receiving element.

The conductive layer 281 and the conductive layer 283 are electrically connected to the light receiving element. The conductive layer 281 preferably transmits light incident on the light receiving element. The conductive layer 283 preferably blocks light incident on the light receiving element.

Since the optical touch sensor is less affected by the light emitted from the light emitting element 230 and can improve the S/N ratio, it is preferably provided between the substrate 103 and the sealing layer 213 .

<Specific example 3>

8B shows another example of the light extraction unit 104 in the light emitting panel. The light emitting panel shown in Fig. 8B can be operated by touch.

The light emitting panel shown in FIG. 8B includes an element layer 101 , an adhesive layer 105 , and a substrate 103 . The device layer 101 includes a substrate 201 , an adhesive layer 203 , an insulating layer 205 , a plurality of transistors, an insulating layer 207 , an insulating layer 209a , an insulating layer 209b , a plurality of light emitting devices, and an insulating layer. A layer 211 , an insulating layer 217 , a sealing layer 213 , a colored layer 259 , a light blocking layer 257 , a plurality of light receiving elements, a conductive layer 280 , a conductive layer 281 , and an insulating layer ( 255) are included.

FIG. 8B shows an example in which a light-receiving element is provided between the insulating layer 205 and the sealing layer 213 . Since the light-receiving element is provided between the insulating layer 205 and the sealing layer 213 , the conductive layer electrically connected to the light-receiving element and the photoelectric conversion layer included in the light-receiving element are the conductive layer included in the transistor 240 and the semiconductor It can be formed using the same material and the same process as the layer. Accordingly, it is possible to manufacture a light emitting panel capable of touch manipulation without significantly increasing the number of manufacturing steps.

<Specific example 4>

9A shows another example of a light emitting panel. The light emitting panel shown in Fig. 9A can be operated by touch.

The light emitting panel shown in FIG. 9A includes an element layer 101 , an adhesive layer 105 , and a substrate 103 . The device layer 101 includes a substrate 201 , an adhesive layer 203 , an insulating layer 205 , a plurality of transistors, a conductive layer 156 , a conductive layer 157 , an insulating layer 207 , an insulating layer 209 , A plurality of light-emitting elements, an insulating layer 211 , an insulating layer 217 , a sealing layer 213 , a colored layer 259 , a light-shielding layer 257 , an insulating layer 255 , a conductive layer 272 , a conductive layer ( 274 ), an insulating layer 276 , an insulating layer 278 , a conductive layer 294 , and a conductive layer 296 .

FIG. 9A illustrates an example in which a capacitive touch sensor is provided between the insulating layer 255 and the sealing layer 213 . The capacitive touch sensor includes a conductive layer 272 and a conductive layer 274 .

Conductive layer 156 and conductive layer 157 are electrically connected to FPC 108 via connector 215 . The conductive layer 294 and the conductive layer 296 are electrically connected to the conductive layer 274 through the conductive particles 292 . Therefore, it is possible to drive the capacitive touch sensor through the FPC (108).

<Specific example 5>

9B shows another example of a light emitting panel. The light emitting panel shown in FIG. 9B can be operated by touch.

The light emitting panel shown in FIG. 9B includes an element layer 101 , an adhesive layer 105 , and a substrate 103 . The device layer 101 includes a substrate 201 , an adhesive layer 203 , an insulating layer 205 , a plurality of transistors, a conductive layer 156 , a conductive layer 157 , an insulating layer 207 , an insulating layer 209 , A plurality of light emitting elements, an insulating layer 211 , an insulating layer 217 , a sealing layer 213 , a colored layer 259 , a light blocking layer 257 , an insulating layer 255 , a conductive layer 270 , a conductive layer ( 272 ), a conductive layer 274 , an insulating layer 276 , and an insulating layer 278 .

FIG. 9B illustrates an example in which a capacitive touch sensor is provided between the insulating layer 255 and the sealing layer 213 . The capacitive touch sensor includes a conductive layer 272 and a conductive layer 274 .

Conductive layer 156 and conductive layer 157 are electrically connected to FPC 108a via connector 215a. Conductive layer 270 is electrically connected to FPC 108b via connector 215b. Accordingly, the light emitting device 230 and the transistor 240 may be driven through the FPC 108a, and the capacitive touch sensor may be driven through the FPC 108b.

<Specific example 6>

10A shows another example of the light extraction unit 104 in the light emitting panel.

The light emitting panel shown in FIG. 10A includes an element layer 101 , a substrate 103 , and an adhesive layer 105 . The device layer 101 includes a substrate 202, an insulating layer 205, a plurality of transistors, an insulating layer 207, a conductive layer 208, an insulating layer 209a, an insulating layer 209b, a plurality of light emitting devices; It includes an insulating layer 211 , a sealing layer 213 , and a colored layer 259 .

The light emitting element 230 includes a lower electrode 231 , an EL layer 233 , and an upper electrode 235 . The lower electrode 231 is electrically connected to a source electrode or a drain electrode of the transistor 240 via the conductive layer 208 . An end of the lower electrode 231 is covered with an insulating layer 211 . The light emitting device 230 has a bottom emission structure. The lower electrode 231 has light-transmitting properties and transmits light emitted from the EL layer 233 .

A colored layer 259 is provided to overlap the light emitting device 230 , and light emitted from the light emitting device 230 is extracted from the substrate 103 side through the colored layer 259 . A space between the light emitting device 230 and the substrate 202 is filled with a sealing layer 213 . Substrate 202 may be formed using the same material as substrate 201 .

<Specific example 7>

10B shows another example of a light emitting panel.

The light emitting panel shown in FIG. 10B includes an element layer 101 , an adhesive layer 105 , and a substrate 103 . The device layer 101 includes a substrate 202 , an insulating layer 205 , a conductive layer 310a , a conductive layer 310b , a plurality of light emitting devices, an insulating layer 211 , a conductive layer 212 , and a sealing layer ( 213).

The conductive layer 310a and the conductive layer 310b, which are external connection electrodes of the light emitting panel, may be electrically connected to the FPC or the like, respectively.

The light emitting element 230 includes a lower electrode 231 , an EL layer 233 , and an upper electrode 235 . An end of the lower electrode 231 is covered with an insulating layer 211 . The light emitting device 230 has a bottom emission structure. The lower electrode 231 has light-transmitting properties and transmits light emitted from the EL layer 233 . The conductive layer 212 is electrically connected to the lower electrode 231 .

The substrate 103 may have, as a light extraction structure, a hemispherical lens, a microlens array, a film provided with an uneven surface structure, a light diffusion film, or the like. For example, the substrate 103 having a light extraction structure may be formed by adhering the above-described lens or film to the substrate or a resin substrate using an adhesive having substantially the same refractive index as the lens or film.

The conductive layer 212 is preferably provided, though not necessarily, because it can prevent a voltage drop due to the resistance of the lower electrode 231 . Further, for a similar purpose, a conductive layer electrically connected to the upper electrode 235 may be provided over the insulating layer 211 , the EL layer 233 , the upper electrode 235 or the like.

The conductive layer 212 is a single layer formed using a material selected from copper, titanium, tantalum, tungsten, molybdenum, chromium, neodymium, scandium, nickel, or aluminum, an alloy material containing any of these materials as a main component, or the like. Or it may be laminated. The thickness of the conductive layer 212 may be, for example, 0.1 μm or more and 3 μm or less, and preferably 0.1 μm or more and 0.5 μm or less.

When a paste (eg, silver paste) is used as a material for the conductive layer electrically connected to the upper electrode 235 , the metal particles forming the conductive layer aggregate, so that the surface of the conductive layer is rough and has many gaps. Therefore, for example, even if the conductive layer is formed over the insulating layer 211, it is difficult for the EL layer 233 to completely cover the conductive layer, so that the upper electrode and the conductive layer are easily electrically connected to each other, which is preferable.

<Example of material>

Next, materials and the like that can be used for the light emitting panel will be described. In addition, description about the structure already demonstrated in this embodiment is abbreviate|omitted.

The element layer 101 includes at least a light emitting element. A self-luminous element may be used as the light emitting element, and an element whose luminance is controlled by current or voltage is included in the category of the light emitting element. For example, a light emitting diode (LED), an organic EL element, an inorganic EL element, or the like can be used.

The element layer 101 may further include a transistor for driving a light emitting element, a touch sensor, and the like.

The structure of the transistor in the light emitting panel is not particularly limited. For example, a staggered transistor or an inverted staggered transistor may be used. A top gate transistor or a bottom gate transistor may be used. There is no particular limitation on the semiconductor material used for the transistor, and for example, silicon or germanium may be used. Alternatively, an oxide semiconductor containing at least one of indium, gallium, and zinc, such as an In-Ga-Zn-based metal oxide, may be used.

There is no particular limitation on the crystallinity of the semiconductor material used for the transistor, and an amorphous semiconductor or a semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially including a crystalline region) may be used. The use of a semiconductor having crystallinity is preferable because deterioration of transistor characteristics can be suppressed.

The light emitting element included in the light emitting panel includes a pair of electrodes (a lower electrode 231 and an upper electrode 235 ) and an EL layer 233 between the pair of electrodes. One of the pair of electrodes functions as an anode and the other serves as a cathode.

The light emitting element may have any of a top emission structure, a bottom emission structure, and a dual emission structure. As an electrode from which light is extracted, a conductive film which transmits visible light is used. As the electrode from which light is not extracted, it is preferable that a conductive film that reflects visible light is used.

The conductive film that transmits visible light may be formed using, for example, indium oxide, indium tin oxide (ITO), indium zinc oxide, zinc oxide, or zinc oxide to which gallium is added. or a film made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium; alloys comprising any of these metallic materials; Alternatively, the nitride (eg, titanium nitride) of any of these metal materials may be formed thinly to have light-transmitting properties. Alternatively, a laminate film of any of the above materials can be used as the conductive film. For example, the use of a laminated film of an alloy of silver and magnesium and ITO is preferable because conductivity can be improved. Alternatively, graphene or the like may be used.

The conductive film that reflects visible light includes, for example, a metal material such as aluminum, gold, platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, or palladium, or any of these metal materials. alloys can be used. In addition, lanthanum, neodymium, germanium or the like may be added to the metal material or alloy. Moreover, alloys containing aluminum, such as an alloy of aluminum and titanium, an alloy of aluminum and nickel, or an alloy of aluminum and neodymium (aluminum alloy); Alternatively, an alloy containing silver, such as an alloy of silver and copper, an alloy of silver, copper, and palladium, or an alloy of silver and magnesium, can be used for the conductive film. An alloy of silver and copper is preferable because it has high heat resistance. In addition, when the metal film or the metal oxide film is laminated in contact with the aluminum alloy film, oxidation of the aluminum alloy film can be prevented. Examples of the material of the metal film or the metal oxide film are titanium and titanium oxide. Alternatively, the above-described conductive film that transmits visible light and a film made of a metal material may be laminated. For example, a laminated film of silver and ITO or a laminated film of an alloy of silver and magnesium and ITO can be used.

Each of the electrodes may be formed by an evaporation method or a sputtering method. Alternatively, a discharge method such as an inkjet method, a printing method such as a screen printing method, or a plating method may be used.

When a voltage higher than the threshold voltage of the light emitting device is applied between the lower electrode 231 and the upper electrode 235 , holes are injected into the EL layer 233 from the anode side and electrons are injected from the cathode side. The injected electrons and holes are recombined in the EL layer 233 , and the light emitting material included in the EL layer 233 emits light.

The EL layer 233 includes at least a light emitting layer. In addition to the light emitting layer, the EL layer 233 has a high hole injection property, a high hole transport property, a hole block material, a high electron transport property, a high electron injection property, and a bipolar material (electron transport property and hole transport property). It may further include one or more layers containing any of these high substances).

For the EL layer 233, either a low molecular compound or a high molecular compound may be used, and an inorganic compound may be used. Each of the layers included in the EL layer 233 may be formed by any one of an evaporation method (including a vacuum evaporation method), a transfer method, a printing method, an inkjet method, a coating method, and the like.

In the element layer 101, the light emitting element is preferably provided between a pair of insulating films with low water permeability. In this case, it is possible to prevent impurities such as water from entering the light emitting element, thereby preventing a decrease in reliability of the light emitting device.

As the insulating film having low water permeability, a film containing nitrogen and silicon (eg, a silicon nitride film or a silicon nitride oxide film), a film containing nitrogen and aluminum (eg, an aluminum nitride film), or the like can be used. Alternatively, a silicon oxide film, a silicon oxynitride film, an aluminum oxide film, or the like can be used.

For example, the water vapor transmission rate of the insulating film with low water permeability is 1×10 ^-5 [g/m ² ·day] or less, preferably 1×10 ^-6 [g/m ² ·day] or less, more preferably 1×10 ^-7 [g/m ² ·day] or less, more preferably 1×10 ^-8 [g/m ² ·day] or less.

The substrate 103 has light transmitting properties and transmits at least light emitted from the light emitting device included in the device layer 101 . The substrate 103 may be a flexible substrate. The refractive index of the substrate 103 is higher than that of the atmosphere.

It is preferable that an organic resin lighter than glass is used for the substrate 103 , and in this case, the light emitting device can be lighter than when glass is used.

Examples of the material having flexibility and light transmittance to visible light include glass thin enough to have flexibility, polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, polyimide resins, polymethylmethacrylate resins, polycarbonate (PC) resins, polyethersulfone (PES) resins, polyamide resins, cycloolefin resins, polystyrene resins, polyamideimide resins, and polyvinyl chloride resins. In particular, a material having a low coefficient of thermal expansion is preferable, and for example, polyamideimide resin, polyimide resin, or PET can be suitably used. It is also possible to use a substrate in which glass fibers are impregnated with an organic resin or a substrate in which an inorganic filler is mixed with the organic resin to reduce the coefficient of thermal expansion.

The substrate 103 includes a layer of any of the materials described above, a hard coat layer (eg, silicon nitride layer) that protects the surface of the light emitting device from damage or the like, and a layer capable of dispersing pressure (eg, aramid water) stratum) and the like may have a laminated structure. In addition, in order to suppress a decrease in the lifetime of the light emitting element due to moisture or the like, the insulating film having low water permeability may be included in the laminate structure.

The adhesive layer 105 has light transmitting properties and transmits at least light emitted from the light emitting device included in the device layer 101 . The refractive index of the adhesive layer 105 is higher than that of the atmosphere.

For the adhesive layer 105, a curable resin that can be cured at room temperature (for example, a two-component mixed resin), a photocurable resin, a thermosetting resin, or the like can be used. Examples of such resins include epoxy resins, acrylic resins, silicone resins, and phenolic resins. In particular, a material having low moisture permeability, such as an epoxy resin, is preferable.

Moreover, the desiccant may be contained in the said resin. For example, a substance that adsorbs moisture by chemical adsorption such as an oxide of an alkaline earth metal (eg, calcium oxide or barium oxide) may be used. Alternatively, a substance that absorbs moisture by physical adsorption, such as zeolite or silica gel, may be used. When the desiccant is included, it is possible to prevent impurities such as moisture from entering the light emitting element, and thus the reliability of the light emitting device is improved.

In addition, when a filler (eg, titanium oxide) having a high refractive index is mixed with the resin, the light extraction efficiency from the light emitting element can be improved, which is preferable.

The adhesive layer 105 may include a scattering member for scattering light. For example, the adhesive layer 105 may be a mixture of the aforementioned resin and particles having a refractive index different from that of the resin. The particle functions as a member for scattering light.

It is preferable that the difference of the refractive index of the particle|grains different from the said resin and the refractive index of the said resin is 0.1 or more, and it is more preferable that it is 0.3 or more. Specifically, an epoxy resin, an acrylic resin, an imide resin, silicone, or the like can be used as the resin, and titanium oxide, barium oxide, zeolite, or the like can be used as the particles.

Particles of titanium oxide or barium oxide are preferable because they can scatter light well. When a zeolite is used, water contained in the resin or the like can be adsorbed, thereby improving the reliability of the light emitting element.

The insulating layer 205 and the insulating layer 255 may each be formed using an inorganic insulating material. In particular, the use of the insulating film having low water permeability is preferable because a highly reliable light emitting panel can be provided.

The insulating layer 207 has an effect of preventing diffusion of impurities into the semiconductor included in the transistor. As the insulating layer 207, an inorganic insulating film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon nitride oxide film, or an aluminum oxide film can be used.

As the insulating layer 209, the insulating layer 209a, and the insulating layer 209b, it is preferable to select an insulating film having a planarization function, respectively, in order to reduce surface irregularities due to transistors or the like. For example, an organic material such as a polyimide resin, an acrylic resin, or a benzocyclobutene-based resin can be used. In addition to these organic materials, a low-dielectric constant material (low-k material) or the like may be used. In addition, the planarization insulating film may have a laminated structure of any of an insulating film and an inorganic insulating film formed of these materials.

The insulating layer 211 is provided to cover the end of the lower electrode 231 . In order to satisfactorily cover the insulating layer 211 with the EL layer 233 and the upper electrode 235 formed on the insulating layer 211, it is preferable that the sidewall of the insulating layer 211 has an inclined surface having a continuous curvature. do.

As a material for the insulating layer 211, a resin or an inorganic insulating material can be used. As resin, a polyimide resin, a polyamide resin, an acrylic resin, a siloxane resin, an epoxy resin, or a phenol resin can be used, for example. In particular, in order to easily form the insulating layer 211, it is preferable to use a negative photosensitive resin or a positive photosensitive resin.

There is no particular limitation on the method of forming the insulating layer 211, but a photolithography method, a sputtering method, an evaporation method, a droplet discharging method (for example, an inkjet method), a printing method (for example, a screen printing method or an offset printing method), etc. may also be used.

The insulating layer 217 may be formed using an inorganic insulating material, an organic insulating material, or the like. For example, as an organic insulating material, negative photosensitive resin, positive photosensitive resin, non-photosensitive resin, etc. can be used. Instead of the insulating layer 217, a conductive layer may be formed. For example, the conductive layer may be formed using a metal material such as titanium or aluminum. When a conductive layer is used instead of the insulating layer 217 and the conductive layer is electrically connected to the upper electrode 235 , a voltage drop due to the resistance of the upper electrode 235 can be prevented. The insulating layer 217 may have either a tapered shape or a reverse tapered shape.

Each of the insulating layer 276 , the insulating layer 278 , the insulating layer 291 , the insulating layer 293 , and the insulating layer 295 may be formed using an inorganic insulating material or an organic insulating material. In particular, in order to reduce surface irregularities caused by the sensor element, it is preferable to use an insulating film having a planarization function for each of the insulating layer 278 and the insulating layer 295 .

For the sealing layer 213 , a resin that can be cured at room temperature (for example, a two-component mixed resin), a photocurable resin, a thermosetting resin, or the like may be used. For example, PVC (polyvinyl chloride) resin, acrylic resin, polyimide resin, epoxy resin, silicone resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, etc. may be used. The sealing layer 213 may contain a desiccant. In addition, when light emitted from the light emitting device 230 is extracted through the sealing layer 213 , the sealing layer 213 preferably includes a filler or a scattering member having a high refractive index. The desiccant, the high refractive index filler, and the material for the scattering member are those that can be used for the adhesive layer 105 .

Each of the conductive layer 156 , the conductive layer 157 , the conductive layer 294 , and the conductive layer 296 may be formed using the same material and the same process as the conductive layer included in the transistor or light emitting device. The conductive layer 280 may be formed using the same material and the same process as the conductive layer included in the transistor.

For example, each of the conductive layers uses any of metal materials such as molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, and scandium, and an alloy material containing any of these elements. It may be formed to have a single-layer structure or a stacked structure. Each of the conductive layers may be formed using a conductive metal oxide. Examples of the conductive metal oxide include indium oxide (eg In ₂ O ₃ ), tin oxide (eg SnO ₂ ), zinc oxide (ZnO), ITO, and indium zinc oxide (eg In ₂ O ₃ -ZnO). ), or one in which silicon oxide is contained in any of these metal oxide materials can be used.

The conductive layer 208, the conductive layer 212, the conductive layer 310a, and the conductive layer 310b may also be formed using any of the above-described metal material, alloy material, and conductive metal oxide, respectively.

Each of the conductive layer 272 , the conductive layer 274 , the conductive layer 281 , and the conductive layer 283 is a light-transmitting conductive layer. For example, it may be formed using indium oxide, ITO, indium zinc oxide, zinc oxide, zinc oxide to which gallium is added, or the like. The conductive layer 270 may be formed using the same material and the same process as the conductive layer 272 .

As the conductive particles 292 , particles such as an organic resin or silica covered with a metal material are used. Since contact resistance can be reduced, it is preferable to use nickel or gold|metal|money as a metal material. It is also preferable to use particles each covered with two or more layers of a metallic material, such as particles covered with nickel and covered with gold.

For the connector 215, a material in the form of a paste or a sheet obtained by a mixture of metal particles and a thermosetting resin and provided with anisotropic conductivity by thermal compression can be used. As the metal particles, particles in which two or more kinds of metals are layered are preferably used, for example, nickel particles covered with gold.

The colored layer 259 is a colored layer that transmits light in a specific wavelength band. For example, a red (R) color filter that transmits light in a red wavelength band, a green (G) color filter that transmits light in a green wavelength band, and a blue (B) color filter that transmits light in a blue wavelength band, etc. Can be used. Each colored layer is formed at a desired position by, for example, an etching method using a printing method, an inkjet method, or a photolithography method using any of various materials.

A light blocking layer 257 is provided between the adjacent colored layers 259 . The light blocking layer 257 blocks light emitted from adjacent light emitting devices, thereby preventing color mixing between adjacent pixels. Here, since the colored layer 259 is provided so that an end thereof overlaps with the light blocking layer 257, light leakage can be reduced. The light blocking layer 257 may be formed using a material that blocks light emitted from the light emitting element, for example, a metal material, a resin material including a pigment or dye, or the like. In addition, when the light blocking layer 257 is provided in an area other than the light extraction unit 104, such as the driving circuit unit 106, as shown in FIG. It is preferable to prevent it.

The insulating layer 261 covering the colored layer 259 and the light blocking layer 257 can be prevented from diffusing impurities such as pigments included in the colored layer 259 or the light blocking layer 257 from diffusing into the light emitting element. It is preferred if this is provided. A light-transmitting material is used for the insulating layer 261 , and an inorganic insulating material or an organic insulating material may be used. The insulating film having low water permeability may be used for the insulating layer 261 . In addition, the insulating layer 261 is not necessarily provided.

<Example of production method>

Next, an example of a method of manufacturing a light emitting panel will be described with reference to FIGS. 11A to 11C and FIGS. 12A to 12C . Here, the manufacturing method is demonstrated using the light emitting panel of specific example 1 (FIG.7(B)) as an example.

First, a release layer 303 is formed on the forming substrate 301 , and an insulating layer 205 is formed on the release layer 303 . Next, a plurality of transistors, a conductive layer 157 , an insulating layer 207 , an insulating layer 209 , a plurality of light emitting elements, and an insulating layer 211 are formed on the insulating layer 205 . Openings are formed in the insulating layer 211, the insulating layer 209, and the insulating layer 207 so that the conductive layer 157 is exposed (FIG. 11(A)).

Further, a release layer 307 is formed on the forming substrate 305 , and an insulating layer 255 is formed on the release layer 307 . Next, the light blocking layer 257, the coloring layer 259, and the insulating layer 261 are formed on the insulating layer 255 (FIG. 11(B)).

A glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, a metal substrate, etc. can be used for the formation substrate 301 and the formation substrate 305, respectively.

For the glass substrate, for example, a glass material such as aluminosilicate glass, aluminoborosilicate glass, or barium borosilicate glass can be used. When the temperature of the heat treatment to be performed later is high, it is preferable to use a substrate having a strain point of 730 DEG C or higher. In addition, when a large amount of barium oxide (BaO) is included, the glass substrate has heat resistance and may be more practical. Alternatively, crystallized glass or the like may be used.

When a glass substrate is used as the forming substrate, if an insulating film such as a silicon oxide film, a silicon oxynitride film, a silicon nitride film, or a silicon nitride oxide film is formed between the forming substrate and the release layer, contamination from the glass substrate can be prevented. It is preferable to be able to

The release layer 303 and the release layer 307 are each selected from tungsten, molybdenum, titanium, tantalum, niobium, nickel, cobalt, zirconium, zinc, ruthenium, rhodium, palladium, osmium, iridium, and silicon. element; an alloy material comprising any of the above elements; or a single-layered structure or a laminated structure comprising a compound material containing any of the above elements. The crystal structure of the layer containing silicon may be amorphous, microcrystalline, or polycrystalline.

The release layer may be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. In addition, the coating method includes a spin coating method, a droplet discharging method, and a dispenser method.

When the release layer has a single-layer structure, it is preferable to form a layer comprising a tungsten layer, a molybdenum layer, or a mixture of tungsten and molybdenum. Alternatively, a layer containing an oxide or oxynitride of tungsten, a layer containing an oxide or oxynitride of molybdenum, or a layer containing an oxide or oxynitride of a mixture of tungsten and molybdenum may be formed. Further, a mixture of tungsten and molybdenum corresponds to, for example, an alloy of tungsten and molybdenum.

When the release layer is formed to have a laminate structure including a layer containing tungsten and a layer containing an oxide of tungsten, a layer containing an oxide of tungsten may be formed as follows: First, a layer containing tungsten By forming an insulating film formed and formed of an oxide thereon, a layer containing an oxide of tungsten is formed at the interface between the tungsten layer and the insulating film. Alternatively, the layer containing the oxide of tungsten is formed by performing thermal oxidation treatment, oxygen plasma treatment, nitrous oxide (N ₂ O) plasma treatment, treatment using a high oxidizing solution such as ozone water, etc. on the surface of the layer containing tungsten may be Plasma treatment or heat treatment may be performed in an atmosphere of oxygen, nitrogen, or nitrous oxide alone, or a mixed gas atmosphere of any of these gases and other gases. By changing the surface state of the release layer by the plasma treatment or heat treatment, the adhesion between the release layer and the insulating layer to be formed later can be controlled.

Each insulating layer may be formed by a sputtering method, a plasma CVD method, a coating method, a printing method, or the like. For example, the insulating layer may be formed by a plasma CVD method at a temperature of 250° C. or higher and 400° C. or lower, thereby providing a dense and very low water permeability film.

Next, a material for the sealing layer 213 is added to the surface of the forming substrate 305 on which the colored layer 259 or the like is formed or to the surface of the forming substrate 301 on which the light emitting element 230 or the like is formed, The forming substrate 301 and the forming substrate 305 are bonded to each other with the sealing layer 213 interposed therebetween (Fig. 11(C)).

Next, the forming substrate 301 is peeled off, and the exposed insulating layer 205 and the substrate 201 are adhered to each other by an adhesive layer 203 . Further, the forming substrate 305 is peeled off, and the exposed insulating layer 255 and the substrate 103 are adhered to each other by the adhesive layer 105 . In FIG. 12A , the substrate 103 does not overlap the conductive layer 157 , but the substrate 103 may overlap the conductive layer 157 .

Any of various methods may be suitably used for the peeling process. For example, when a layer including a metal oxide film is formed as the release layer on the side in contact with the layer to be peeled off, the layer to be peeled can be peeled from the forming substrate by softening the metal oxide film by crystallization. Alternatively, when an amorphous silicon film containing hydrogen as a release layer is formed between the forming substrate having high heat resistance and the layer to be peeled off, the layer to be peeled is removed from the forming substrate by removing the amorphous silicon film by laser light irradiation or etching. can be peeled off. Alternatively, as a release layer, a layer including a metal oxide film is formed on the side in contact with the layer to be removed, the metal oxide film is _{softened by crystallization, and a part of the release layer is dissolved in solution or NF 3} , BrF ₃ , or ClF _{By removing by etching using a fluorine gas such as 3} , peeling can be performed on the softened metal oxide film. In addition, using a film containing nitrogen, oxygen, hydrogen, etc. (for example, an amorphous silicon film containing hydrogen, an alloy film containing hydrogen, an alloy film containing oxygen, etc.) as the exfoliation layer, laser light is applied to the exfoliation layer. A method may be used in which the peeling layer and the forming substrate are accelerated by irradiating nitrogen, oxygen, or hydrogen contained in the peeling layer to be released as a gas. Alternatively, a method may be used in which the forming substrate provided with the layer to be peeled off is removed by mechanical removal or _{etching using a solution or a fluorine gas such as NF 3} , BrF ₃ , or ClF _{3 .} In this case, the release layer is not necessarily provided.

In addition, the peeling process can be easily performed by combining the above-mentioned peeling methods. In other words, laser light irradiation, etching of the peeling layer by a gas, a solution, etc., and mechanical removal with a sharp knife, scalpel, etc. are performed so that the peeling layer and the peeling layer can be easily peeled from each other, and then by physical force. Peeling may be performed (by machine, etc.).

The peeling of the peeling layer from the forming substrate may be performed by filling the interface between the peeling layer and the peeling layer with a liquid. In addition, peeling may be performed while pouring a liquid, such as water.

As another peeling method, when the peeling layer is formed using tungsten, it is preferable that peeling is performed while etching the peeling layer using a mixed solution of aqueous ammonia and hydrogen peroxide.

Further, if peeling is possible at the interface between the forming substrate and the layer to be peeled off, the peeling layer is not required. For example, glass is used as a forming substrate, an organic resin such as polyimide, polyester, polyolefin, polyamide, polycarbonate, or acrylic is formed so as to be in contact with the glass, and an insulating film, transistor, etc. are formed on the organic resin. . In this case, peeling at the interface between the forming substrate and the organic resin is made possible by heating the organic resin. Alternatively, peeling at the interface between the metal layer and the organic resin may be performed in the following manner: A metal layer is provided between the forming substrate and the organic resin, and an electric current is passed through the metal layer to heat the metal layer. The organic resin peeled from the forming substrate can be used as the substrate of the light emitting panel. Alternatively, the organic resin may be adhered to the substrate by an adhesive.

Finally, openings are formed in the insulating layer 255 and the sealing layer 213 to expose the conductive layer 157 (FIG. 12B). When the substrate 103 overlaps the conductive layer 157, openings are also formed in the substrate 103 and the adhesive layer 105 to expose the conductive layer 157 (FIG. 12(C)). The method of forming the opening is not particularly limited, and for example, a laser ablation method, an etching method, an ion beam sputtering method, or the like may be used. As another method, a part of the film may be peeled off with a physical force by cutting the film on the conductive layer 157 with a sharp knife or the like.

As described above, a light emitting panel can be produced.

As described above, the light emitting panel of this embodiment includes two substrates, one of which is the substrate 103 and the other is the substrate 201 or the substrate 202 . Even including the touch sensor, the light emitting panel may be formed of two substrates. By using the minimum number of substrates, the improvement of the light extraction efficiency and the improvement of the sharpness of the display can be easily achieved.

This embodiment can be suitably combined with any of the other embodiments.

(Embodiment 3)

In the present embodiment, a light emitting panel will be described with reference to FIG. 13 .

The light emitting panel shown in FIG. 13 includes a substrate 401 , a transistor 240 , a light emitting element 230 , an insulating layer 207 , an insulating layer 209 , an insulating layer 211 , an insulating layer 217 , and a space ( 405), an insulating layer 261, a light blocking layer 257, a coloring layer 259, a light receiving element (a p-type semiconductor layer 271, an i-type semiconductor layer 273, and an n-type semiconductor layer 275) ), a conductive layer 281 , a conductive layer 283 , an insulating layer 291 , an insulating layer 293 , an insulating layer 295 , and a substrate 403 .

The light emitting panel includes an adhesive layer (not shown) formed in a frame shape to surround the light emitting device 230 and the light receiving device between the substrate 401 and the substrate 403 . The light emitting device 230 is sealed by the adhesive layer, the substrate 401 , and the substrate 403 .

In the light emitting panel of this embodiment, the substrate 403 has light transmitting properties. Light emitted from the light emitting element 230 is extracted into the atmosphere through the colored layer 259 , the substrate 403 , and the like.

The light emitting panel of the present embodiment is capable of touch operation. Specifically, the proximity or contact of an object on the surface of the substrate 403 can be sensed by using the light-receiving element.

The optical touch sensor is preferable because of its high durability because the sensing precision is not affected by damage to the surface that the object is in contact with. The optical touch sensor also has advantages in that non-contact sensing is possible, the sharpness of an image does not deteriorate when used in a display device, and can be applied to large-sized light emitting panels and display devices.

The optical touch sensor is preferably provided between the substrate 403 and the space 405 because it is difficult to be affected by the light emitted from the light emitting element 230 and can improve the S/N ratio.

The light-shielding layer 257 is closer to the substrate 401 than the light-receiving element, and overlaps the light-receiving element. The light blocking layer 257 may prevent the light emitted from the light emitting device 230 from being irradiated to the light receiving device.

There is no particular limitation on the material used for the substrate 401 and the substrate 403 . The substrate from which the light emitted from the light emitting element is extracted is formed using a material that transmits the light. For example, a material such as glass, quartz, ceramic, sapphire, or organic resin can be used. Since the substrate from which light is not extracted does not require translucency, in addition to the above-mentioned substrate, a metal substrate or the like using a metal material or an alloy material can be used. Further, for the substrate 401 and the substrate 403, any of the materials for the substrate in the above-described embodiments may be used.

The sealing method of the light emitting panel is not limited, and either solid sealing or hollow sealing may be employed. For example, as the sealing material, a glass material such as glass frit, or a resin material such as a resin that can be cured at room temperature (for example, a two-component mixed resin), a photocurable resin, or a thermosetting resin can be used. The space 405 may be filled with an inert gas such as nitrogen or argon, or a resin such as that used for the sealing layer 213 . Further, the resin may contain the desiccant, a filler having a high refractive index, or a scattering member.

This embodiment can be suitably combined with any of the other embodiments.

(Example)

In this example, a light emitting device of one embodiment of the present invention was fabricated. The light emitting device of this embodiment can be said to be a tri-fold folding screen type display that can be folded into three pieces.

18A and 18B show a light emitting panel of the light emitting device manufactured in this embodiment. In the light emitting device fabricated in this embodiment, the size of the substrate 103 and the substrate 201 are different, and the insulating layer 217 is provided between pixels of different colors in Specific Example 1 ( It is different from FIG. 7(B)). For other components, reference may be made to the description of Specific Example 1 and the like. About the insulating layer 217, description of Specific Example 2 etc. can be referred.

A light emitting panel was manufactured using the manufacturing method described in Embodiment 2.

First, a release layer 303 was formed on a glass substrate serving as a forming substrate 301 , and a layer to be released was formed on the release layer 303 . Further, the release layer 307 was formed on the glass substrate serving as the forming substrate 305 , and the release layer 307 was formed on the release layer 307 . Next, the forming substrate 301 and the forming substrate 305 were adhered so that the surfaces on which the layer to be peeled off were formed face each other. At this time, the two forming substrates were peeled off from the layer to be peeled off, and the flexible substrate was adhered to the layer to be peeled off. The material of each of the layers is described below.

A laminated structure of a tungsten film and a tungsten oxide film on the tungsten film was formed as a release layer 303 and a release layer 307, respectively.

The laminated structure of the release layer immediately after film formation is not easily peeled off, but by reacting with the inorganic insulating film by heat treatment, the interface state between the release layer and the inorganic insulating film changes and becomes unstable. Therefore, physical peeling is made possible by forming the starting point of peeling.

As a layer to be peeled off on the peeling layer 303 , an insulating layer 205 , a transistor, and an organic EL device functioning as a light emitting device 230 were formed. As a layer to be peeled off on the peeling layer 307, an insulating layer 255, a color filter (corresponding to the colored layer 259), and the like were formed.

A laminated structure including a silicon oxynitride film, a silicon nitride film, or the like was used as each of the insulating layer 205 and the insulating layer 255 .

As the transistor, a transistor including a c-axis oriented crystalline oxide semiconductor (CAAC-OS) was used. Since the CAAC-OS is not amorphous, there are few defect states, and the reliability of the transistor can be improved by using the CAAC-OS. In addition, since the CAAC-OS does not have grain boundaries, cracks hardly occur in the CAAC-OS film due to the stress caused by folding the flexible device.

CAAC-OS is an oxide semiconductor having a c-axis orientation in a direction substantially perpendicular to the surface of the film. Oxide semiconductors are known to have a variety of crystal structures different from an amorphous structure and a single crystal structure. An example of such a structure is the nanocrystal (nc) structure, which is an aggregate of nanoscale microcrystals. The crystallinity of the CAAC structure is lower than that of the single crystal structure, but higher than that of the amorphous structure and the nc structure.

In this embodiment, a channel etch transistor including an In-Ga-Zn-based oxide is used. This transistor can be fabricated on a glass substrate in a process with a temperature of less than 500°C.

In a method of directly manufacturing an element such as a transistor on an organic resin such as a plastic substrate, the temperature in the process of manufacturing the element needs to be lower than the upper limit temperature of the organic resin. In this embodiment, since the forming substrate is a glass substrate and the release layer, which is an inorganic film, has high heat resistance, the transistor can be fabricated at the same temperature as when the transistor is fabricated on a glass substrate. Accordingly, reliability and performance of the transistor can be easily secured.

As the light emitting device 230 , a tandem organic EL device including a fluorescent light emitting unit including a blue light emitting layer and a phosphorescent light emitting unit including a green light emitting layer and a red light emitting layer was used. The light emitting device 230 has a top emission structure. As the lower electrode 231 of the light emitting element 230, an aluminum film, a titanium film on the aluminum film, and an ITO film serving as an optical adjustment layer on the titanium film were laminated. The thickness of the optical adjustment layer was different depending on the color of the pixel. By combining the color filter and the microcavity structure, light with high color purity can be extracted from the light emitting panel manufactured in this embodiment. As each of the substrate 103 and the substrate 201, a flexible organic resin film having a thickness of 20 µm was used.

The manufactured light emitting panel had a size of a light emitting part (pixel part) of 5.9 inches in diagonal, 720 x 1280 x 3 (RGB) pixels, a pixel pitch of 0.102 mm x 0.102 mm, a resolution of 249 ppi, and an aperture ratio of 45.2%. A built-in scan driver and a source driver bonded to the outside by COF (Chip On Film) were used.

19A to 19D are photographs showing display in the light emitting device manufactured in this embodiment. 19(A) shows an open light-emitting device, FIGS. 19(B) and (C) show a folded light-emitting device, respectively, and FIG. 19(D) shows a folded light-emitting device. The radius of curvature of the fold was 4 mm. The light emitting device of this embodiment had no problems in display and driving even when folded while displaying an image. The light emitting device of this embodiment has a function of sensing whether it is an open state or a folded state by a sensor, and displaying a different image according to the state. With this function, the light emitting device also has a function of saving power by stopping the driving of the area of the light emitting panel hidden in the folded state.

Here, if the light emitting panel is completely fixed by the pair of protective layers and/or the pair of support panels, when the light emitting device is folded, the light emitting panel may be damaged by tension. Further, when the light emitting device is opened, the light emitting panel may be damaged by receiving a force in the direction in which the light emitting panel shrinks. The light emitting panel of the light emitting device manufactured in this embodiment is not completely fixed with a pair of protective layers and/or a pair of support panels. Accordingly, when the light emitting device is folded or opened, by sliding the light emitting panel, the position of the light emitting panel with respect to the pair of protective layers and/or the pair of support panels is changed. Accordingly, the light emitting panel can be prevented from being damaged by being subjected to force.

20A to 20C show a light emitting device of one embodiment of the present invention. Here, the light emitting panel 11 is not fixed with a pair of support panels (15a(1)) and (15b(1)). The light emitting panel 11 is a pair of support panels ((15a(2)) and (15b(2))), a pair of support panels ((15a(3)) and (15b(3))), or these supported on both sides. The light emitting device of one embodiment of the present invention includes a plurality of pairs of supporting panels, but the light emitting panel only needs to be fixed with at least one pair of supporting panels.

The display of the light emitting panel 11 along the dashed-dotted line M1-N1 in the light emitting device in the open state shown in FIG. Follow N2. In addition, the display follows the dashed-dotted line M3-N3 of the light emitting device in the folded state shown in Fig. 20C. As such, in the light emitting device of one embodiment of the present invention, the light emitting panel slides when the light emitting device is folded or opened because the light emitting panel is not completely fixed with the pair of protective layers and/or the pair of support panels. Also, the position of the light emitting panel with respect to the pair of protective layers and/or the pair of support panels is changed. Accordingly, the light emitting panel can be prevented from being damaged by being subjected to force.

11: light emitting panel, 11a: light emitting region, 11b: non-light emitting region, 13: protective layer, 13a: protective layer, 13b: protective layer, 15: support panel, 15a: support panel, 15b: support panel, 101: device layer , 103: substrate, 104: light extraction unit, 105: adhesive layer, 106: driving circuit unit, 108: FPC, 108a: FPC, 108b: FPC, 156: conductive layer, 157: conductive layer, 201: substrate, 202: substrate, 203 adhesive layer, 205 insulating layer, 207 insulating layer, 208 conductive layer, 209 insulating layer, 209a insulating layer, 209b insulating layer, 211 insulating layer, 212 conductive layer, 213 sealing layer, 215 : connector, 215a: connector, 215b: connector, 217: insulating layer, 230: light emitting element, 231: lower electrode, 233: EL layer, 235: upper electrode, 240: transistor, 255: insulating layer, 257: light blocking layer; 259 colored layer 261 insulating layer 270 conductive layer 271 p-type semiconductor layer 272 conductive layer 273 i-type semiconductor layer 274 conductive layer 275 n-type semiconductor layer 276 insulating layer , 278: insulating layer, 280: conductive layer, 281: conductive layer, 283: conductive layer, 291: insulating layer, 292: conductive particles, 293: insulating layer, 294: conductive layer, 295: insulating layer, 296: conductive layer , 301: forming substrate, 303: release layer, 305: forming substrate, 307: release layer, 310a: conductive layer, 310b: conductive layer, 401: substrate, 403: substrate, 405: space.
This application is a Japanese patent application with serial number 2013-146291 filed with the Japan Patent Office on July 12, 2013, a Japanese patent application with serial number 2013-146293 filed with the Japanese Patent Office on July 12, 2013, and a Japanese patent application with serial number 2013-146293 filed with the Japan Patent Office on July 12, 2013 Based on the Japanese Patent Application of Serial No. 2013-249155, filed with the Japan Patent Office on Feb. 2, the entirety of which is incorporated herein by reference.

Claims (12)

A light emitting device comprising:
flexible light emitting panel; and
a plurality of supporting panels each having lower flexibility than the flexible light emitting panel to prevent the light emitting device from being bent at an unwanted portion;
The flexible light emitting panel includes a region that can be bent inward or outward, and the gap of the flexible light emitting panel decreases toward an end of the flexible light emitting panel as the distance from the region increases. A light emitting device comprising:
flexible light emitting panel; and
a plurality of supporting panels each having lower flexibility than the flexible light emitting panel to prevent the light emitting device from being bent at an unwanted portion;
The flexible light emitting panel includes a region bendable inwardly or outwardly with a radius of curvature and first flat region and second flat region respectively connected to the region, the distance between the first flat region and the second flat region is less than twice the radius of curvature. 3. The method of claim 2,
The radius of curvature is 1 mm or more and 10 mm or less. A light emitting device comprising:
flexible light emitting panel; and
a plurality of supporting panels each having lower flexibility than the flexible light emitting panel to prevent the light emitting device from being bent at an unwanted portion;
the flexible light emitting panel comprises a first surface on one side of the flexible light emitting panel and a second surface on the other side of the flexible light emitting panel;
The flexible light emitting panel is such that a first portion of the first surface and a second portion of the first surface are bent inwardly by a first radius of curvature to face each other, the first portion of the second surface and the second portion of the second surface portions are bent outwardly to a second radius of curvature to be folded facing each other, wherein the shortest distance between the first portion of the first surface and the first portion of the second surface is the first radius of curvature and the second less than twice the sum of the radii of curvature,
and the second portion of the first surface is opposite the second portion of the second surface. 5. The method of claim 4,
and each of the first radius of curvature and the second radius of curvature is 1 mm or more and 10 mm or less. 5. The method of any one of claims 1, 2, and 4,
The flexible light emitting panel comprises an electroluminescent element, a light emitting device. delete A light emitting device comprising:
a flexible light emitting panel;
a first support panel;
a second support panel;
The flexible light emitting panel includes a region that can be bent outward, and the gap of the flexible light emitting panel decreases toward the end of the flexible light emitting panel as the distance from the region increases,
the region is located between the first support panel and the second support panel;
The region can display an image in a state in which the flexible light emitting panel is folded,
The light emitting device of claim 1, wherein each of the first support panel and the second support panel has lower flexibility than that of the flexible light emitting panel. A light emitting device comprising:
a flexible light emitting panel;
a first support panel;
a second support panel;
The flexible light emitting panel includes a region bendable outwardly with a radius of curvature, and a first flat region and a second flat region respectively connected to the region, wherein the distance between the first flat region and the second flat region is the less than twice the radius of curvature,
the region is located between the first support panel and the second support panel;
The region can display an image in a state in which the flexible light emitting panel is folded,
The light emitting device of claim 1, wherein each of the first support panel and the second support panel has lower flexibility than that of the flexible light emitting panel. A light emitting device comprising:
a flexible light emitting panel;
a first support panel;
a second support panel;
The flexible light emitting panel includes a region that can be bent outward with a radius of curvature, and the gap of the flexible light emitting panel decreases toward the end of the flexible light emitting panel as the distance from the region increases,
the region is located between the first support panel and the second support panel;
The region can display an image in a state in which the flexible light emitting panel is folded,
Each of the first support panel and the second support panel has a flexibility lower than that of the flexible light emitting panel,
The radius of curvature is greater than or equal to 1 mm and less than or equal to 150 mm. A light emitting device comprising:
a flexible light emitting panel;
a first support panel;
a second support panel;
The flexible light emitting panel includes a region bendable outwardly with a radius of curvature, and first and second flat regions respectively connected to the regions, wherein a distance between the first flat region and the second flat region is equal to the distance between the first flat region and the second flat region. less than twice the radius,
the region is located between the first support panel and the second support panel;
The region can display an image in a state in which the flexible light emitting panel is folded,
Each of the first support panel and the second support panel has a flexibility lower than that of the flexible light emitting panel,
The radius of curvature is greater than or equal to 1 mm and less than or equal to 150 mm. 12. The method according to any one of claims 8 to 11,
The flexible light emitting panel comprises an electroluminescent element, a light emitting device.

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